Dual N-Channel MOSFET, 6.5 A, 20 V, 8-Pin SOIC onsemi NTMD6N02G

RS Stock No.: 805-4525Brand: ON SemiconductorManufacturers Part No.: NTMD6N02R2G
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

6.5 A

Maximum Drain Source Voltage

20 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

49 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

12 nC @ 4.5 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

2

Height

1.5mm

Minimum Operating Temperature

-55 °C

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P.O.A.

Dual N-Channel MOSFET, 6.5 A, 20 V, 8-Pin SOIC onsemi NTMD6N02G

P.O.A.

Dual N-Channel MOSFET, 6.5 A, 20 V, 8-Pin SOIC onsemi NTMD6N02G
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

6.5 A

Maximum Drain Source Voltage

20 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

49 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

12 nC @ 4.5 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

2

Height

1.5mm

Minimum Operating Temperature

-55 °C