N-Channel MOSFET, 109 A, 60 V, 8-Pin WDFN onsemi NVTFS5C658NLWF

RS Stock No.: 141-3571Brand: ON SemiconductorManufacturers Part No.: NVTFS5C658NLWFTAG
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

109 A

Maximum Drain Source Voltage

60 V

Package Type

WDFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

114 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

3.15mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

3.15mm

Typical Gate Charge @ Vgs

27 nC @ 10 V

Height

0.75mm

Series

NVTFS5C658NL

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Product details

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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P.O.A.

N-Channel MOSFET, 109 A, 60 V, 8-Pin WDFN onsemi NVTFS5C658NLWF
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P.O.A.

N-Channel MOSFET, 109 A, 60 V, 8-Pin WDFN onsemi NVTFS5C658NLWF
Stock information temporarily unavailable.
Select packaging type

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

109 A

Maximum Drain Source Voltage

60 V

Package Type

WDFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

114 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

3.15mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

3.15mm

Typical Gate Charge @ Vgs

27 nC @ 10 V

Height

0.75mm

Series

NVTFS5C658NL

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Product details

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor