Technical Document
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
1.2 to 3mA
Maximum Drain Source Voltage
30 V
Maximum Drain Gate Voltage
-30V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-883
Pin Count
3
Drain Gate On-Capacitance
4pF
Source Gate On-Capacitance
4pF
Dimensions
1.08 x 0.68 x 0.41mm
Length
1.08mm
Height
0.41mm
Maximum Power Dissipation
100 mW
Maximum Operating Temperature
+150 °C
Width
0.68mm
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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AED 0.85
Each (In a Pack of 50) (ex VAT)
AED 0.892
Each (In a Pack of 50) (inc VAT)
50
AED 0.85
Each (In a Pack of 50) (ex VAT)
AED 0.892
Each (In a Pack of 50) (inc VAT)
50
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
50 - 200 | AED 0.85 | AED 42.50 |
250 - 950 | AED 0.40 | AED 20.00 |
1000 - 2450 | AED 0.35 | AED 17.50 |
2500+ | AED 0.35 | AED 17.50 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
1.2 to 3mA
Maximum Drain Source Voltage
30 V
Maximum Drain Gate Voltage
-30V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-883
Pin Count
3
Drain Gate On-Capacitance
4pF
Source Gate On-Capacitance
4pF
Dimensions
1.08 x 0.68 x 0.41mm
Length
1.08mm
Height
0.41mm
Maximum Power Dissipation
100 mW
Maximum Operating Temperature
+150 °C
Width
0.68mm
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.