Dual N/P-Channel MOSFET, 2.5 A, 3 A, 60 V, 8-Pin SOT-28FL, VEC8 onsemi VEC2616-TL-W

RS Stock No.: 121-7893Brand: onsemiManufacturers Part No.: VEC2616-TL-W
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Technical Document

Specifications

Brand

onsemi

Channel Type

N, P

Maximum Continuous Drain Current

2.5 A, 3 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-28FL, VEC8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

116 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Length

2.9mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Width

2.3mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Height

0.73mm

Forward Diode Voltage

1.2V

Country of Origin

China

Product details

Dual N/P-Channel MOSFET, ON Semiconductor

The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.

MOSFET Transistors, ON Semiconductor

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AED 2.65

Each (In a Pack of 10) (ex VAT)

AED 2.782

Each (In a Pack of 10) (inc VAT)

Dual N/P-Channel MOSFET, 2.5 A, 3 A, 60 V, 8-Pin SOT-28FL, VEC8 onsemi VEC2616-TL-W
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AED 2.65

Each (In a Pack of 10) (ex VAT)

AED 2.782

Each (In a Pack of 10) (inc VAT)

Dual N/P-Channel MOSFET, 2.5 A, 3 A, 60 V, 8-Pin SOT-28FL, VEC8 onsemi VEC2616-TL-W
Stock information temporarily unavailable.
Select packaging type

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quantityUnit pricePer Pack
10 - 40AED 2.65AED 26.50
50 - 190AED 2.60AED 26.00
200 - 490AED 2.50AED 25.00
500+AED 2.45AED 24.50

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Technical Document

Specifications

Brand

onsemi

Channel Type

N, P

Maximum Continuous Drain Current

2.5 A, 3 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-28FL, VEC8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

116 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Length

2.9mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Width

2.3mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Height

0.73mm

Forward Diode Voltage

1.2V

Country of Origin

China

Product details

Dual N/P-Channel MOSFET, ON Semiconductor

The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.

MOSFET Transistors, ON Semiconductor