Semikron SKM100GB12T4 Dual Half Bridge IGBT Module, 160 A 1200 V, 7-Pin SEMITRANS2, Panel Mount

RS Stock No.: 687-4958Brand: SemikronManufacturers Part No.: SKM100GB12T4
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Technical Document

Specifications

Maximum Continuous Collector Current

160 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

SEMITRANS2

Configuration

Dual Half Bridge

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

94 x 34 x 30.1mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

Product details

Dual IGBT Modules

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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AED 425.45

Each (ex VAT)

AED 446.72

Each (inc VAT)

Semikron SKM100GB12T4 Dual Half Bridge IGBT Module, 160 A 1200 V, 7-Pin SEMITRANS2, Panel Mount

AED 425.45

Each (ex VAT)

AED 446.72

Each (inc VAT)

Semikron SKM100GB12T4 Dual Half Bridge IGBT Module, 160 A 1200 V, 7-Pin SEMITRANS2, Panel Mount
Stock information temporarily unavailable.

Buy in bulk

quantityUnit price
1 - 1AED 425.45
2 - 4AED 404.20
5 - 9AED 385.90
10 - 19AED 342.90
20+AED 330.95

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Technical Document

Specifications

Maximum Continuous Collector Current

160 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

SEMITRANS2

Configuration

Dual Half Bridge

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

94 x 34 x 30.1mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

Product details

Dual IGBT Modules

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.