Semikron SKM400GAL12E4 Single IGBT Module, 618 A 1200 V, 5-Pin SEMITRANS3, Panel Mount

RS Stock No.: 687-4989Brand: SemikronManufacturers Part No.: SKM400GAL12E4
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Technical Document

Specifications

Maximum Continuous Collector Current

618 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Configuration

Single

Package Type

SEMITRANS3

Mounting Type

Panel Mount

Channel Type

N

Pin Count

5

Transistor Configuration

Single

Dimensions

106.4 x 61.4 x 30.5mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

Width

61.4mm

Product details

Single IGBT Modules

SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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AED 1,052.45

Each (ex VAT)

AED 1,105.07

Each (inc VAT)

Semikron SKM400GAL12E4 Single IGBT Module, 618 A 1200 V, 5-Pin SEMITRANS3, Panel Mount

AED 1,052.45

Each (ex VAT)

AED 1,105.07

Each (inc VAT)

Semikron SKM400GAL12E4 Single IGBT Module, 618 A 1200 V, 5-Pin SEMITRANS3, Panel Mount
Stock information temporarily unavailable.

Buy in bulk

quantityUnit price
1 - 9AED 1,052.45
10 - 19AED 1,000.85
20 - 49AED 950.40
50 - 249AED 903.00
250+AED 866.30

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Technical Document

Specifications

Maximum Continuous Collector Current

618 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Configuration

Single

Package Type

SEMITRANS3

Mounting Type

Panel Mount

Channel Type

N

Pin Count

5

Transistor Configuration

Single

Dimensions

106.4 x 61.4 x 30.5mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

Width

61.4mm

Product details

Single IGBT Modules

SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.