N-Channel MOSFET, 11 A, 650 V, 3-Pin DPAK STMicroelectronics STD13NM60N

RS Stock No.: 760-9881Brand: STMicroelectronicsManufacturers Part No.: STD13NM60N
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

360 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

90 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Typical Gate Charge @ Vgs

30 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.6mm

Width

6.2mm

Transistor Material

Si

Height

2.4mm

Series

MDmesh

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P.O.A.

N-Channel MOSFET, 11 A, 650 V, 3-Pin DPAK STMicroelectronics STD13NM60N

P.O.A.

N-Channel MOSFET, 11 A, 650 V, 3-Pin DPAK STMicroelectronics STD13NM60N
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

360 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

90 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Typical Gate Charge @ Vgs

30 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.6mm

Width

6.2mm

Transistor Material

Si

Height

2.4mm

Series

MDmesh

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more