N-Channel MOSFET, 60 A, 55 V, 3-Pin DPAK STMicroelectronics STD60NF55LT4

RS Stock No.: 760-9588Brand: STMicroelectronicsManufacturers Part No.: STD60NF55LT4
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

55 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Width

6.2mm

Transistor Material

Si

Typical Gate Charge @ Vgs

40 nC @ 5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.6mm

Series

STripFET II

Height

2.4mm

Minimum Operating Temperature

-55 °C

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P.O.A.

N-Channel MOSFET, 60 A, 55 V, 3-Pin DPAK STMicroelectronics STD60NF55LT4

P.O.A.

N-Channel MOSFET, 60 A, 55 V, 3-Pin DPAK STMicroelectronics STD60NF55LT4
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

55 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Width

6.2mm

Transistor Material

Si

Typical Gate Charge @ Vgs

40 nC @ 5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.6mm

Series

STripFET II

Height

2.4mm

Minimum Operating Temperature

-55 °C