Technical Document
Specifications
Brand
ToshibaMaximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220SIS
Maximum Drain Source Resistance
3,8 mΩ
Maximum Power Dissipation
45 W
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
140 nC při 10 V
Country of Origin
China
Product details
MOSFET Transistors, Toshiba
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AED 13.95
Each (In a Pack of 2) (ex VAT)
AED 14.648
Each (In a Pack of 2) (inc VAT)
2
AED 13.95
Each (In a Pack of 2) (ex VAT)
AED 14.648
Each (In a Pack of 2) (inc VAT)
2
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
2 - 18 | AED 13.95 | AED 27.90 |
20 - 38 | AED 12.30 | AED 24.60 |
40 - 98 | AED 10.75 | AED 21.50 |
100 - 498 | AED 10.05 | AED 20.10 |
500+ | AED 9.50 | AED 19.00 |
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Technical Document
Specifications
Brand
ToshibaMaximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220SIS
Maximum Drain Source Resistance
3,8 mΩ
Maximum Power Dissipation
45 W
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
140 nC při 10 V
Country of Origin
China
Product details