Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
263 A
Maximum Drain Source Voltage
60 V
Series
U-MOSVIII-H
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
255 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Height
15.1mm
Forward Diode Voltage
1.2V
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
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AED 9.00
Each (In a Pack of 5) (ex VAT)
AED 9.45
Each (In a Pack of 5) (inc VAT)
5
AED 9.00
Each (In a Pack of 5) (ex VAT)
AED 9.45
Each (In a Pack of 5) (inc VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | AED 9.00 | AED 45.00 |
25 - 45 | AED 8.10 | AED 40.50 |
50 - 120 | AED 7.35 | AED 36.75 |
125+ | AED 6.90 | AED 34.50 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
263 A
Maximum Drain Source Voltage
60 V
Series
U-MOSVIII-H
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
255 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Height
15.1mm
Forward Diode Voltage
1.2V
Country of Origin
Japan
Product details