Toshiba TTD1409B,S4X(S Dual NPN Darlington Transistor, 6 A 400 V HFE:100, 3-Pin TO-220SIS

RS Stock No.: 144-5246Brand: ToshibaManufacturers Part No.: TTD1409B,S4X(S
brand-logo
View all in Darlington Pairs

Technical Document

Specifications

Brand

Toshiba

Transistor Type

NPN

Maximum Continuous Collector Current

6 A

Maximum Collector Emitter Voltage

400 V

Maximum Emitter Base Voltage

5 V

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Configuration

Single

Number of Elements per Chip

2

Minimum DC Current Gain

100

Maximum Base Emitter Saturation Voltage

2.5 V

Maximum Collector Base Voltage

600 V

Maximum Collector Emitter Saturation Voltage

2 V

Maximum Collector Cut-off Current

20µA

Maximum Operating Temperature

+150 °C

Length

10mm

Base Current

1A

Height

15mm

Width

4.5mm

Maximum Power Dissipation

25 W @ 25 °C

Dimensions

10 x 4.5 x 15mm

Country of Origin

Japan

Product details

NPN Darlington Transistors, Toshiba

Bipolar Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

AED 3.00

Each (In a Pack of 10) (ex VAT)

AED 3.15

Each (In a Pack of 10) (inc VAT)

Toshiba TTD1409B,S4X(S Dual NPN Darlington Transistor, 6 A 400 V HFE:100, 3-Pin TO-220SIS

AED 3.00

Each (In a Pack of 10) (ex VAT)

AED 3.15

Each (In a Pack of 10) (inc VAT)

Toshiba TTD1409B,S4X(S Dual NPN Darlington Transistor, 6 A 400 V HFE:100, 3-Pin TO-220SIS
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Pack
10 - 20AED 3.00AED 30.00
30+AED 2.50AED 25.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Transistor Type

NPN

Maximum Continuous Collector Current

6 A

Maximum Collector Emitter Voltage

400 V

Maximum Emitter Base Voltage

5 V

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Configuration

Single

Number of Elements per Chip

2

Minimum DC Current Gain

100

Maximum Base Emitter Saturation Voltage

2.5 V

Maximum Collector Base Voltage

600 V

Maximum Collector Emitter Saturation Voltage

2 V

Maximum Collector Cut-off Current

20µA

Maximum Operating Temperature

+150 °C

Length

10mm

Base Current

1A

Height

15mm

Width

4.5mm

Maximum Power Dissipation

25 W @ 25 °C

Dimensions

10 x 4.5 x 15mm

Country of Origin

Japan

Product details

NPN Darlington Transistors, Toshiba

Bipolar Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more