Technical Document
Specifications
Brand
ToshibaTransistor Type
PNP
Maximum Continuous Collector Current
7 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
6 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
2 V
Maximum Collector Base Voltage
120 V
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
2µA
Height
15mm
Width
4.5mm
Maximum Power Dissipation
25 W @ 25 °C
Dimensions
10 x 4.5 x 15mm
Maximum Operating Temperature
+150 °C
Length
100mm
Base Current
0.7A
Country of Origin
Japan
Product details
NPN Darlington Transistors, Toshiba
Bipolar Transistors, Toshiba
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AED 2.50
Each (In a Pack of 10) (ex VAT)
AED 2.625
Each (In a Pack of 10) (inc VAT)
10
AED 2.50
Each (In a Pack of 10) (ex VAT)
AED 2.625
Each (In a Pack of 10) (inc VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 20 | AED 2.50 | AED 25.00 |
30+ | AED 2.20 | AED 22.00 |
Technical Document
Specifications
Brand
ToshibaTransistor Type
PNP
Maximum Continuous Collector Current
7 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
6 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
2 V
Maximum Collector Base Voltage
120 V
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
2µA
Height
15mm
Width
4.5mm
Maximum Power Dissipation
25 W @ 25 °C
Dimensions
10 x 4.5 x 15mm
Maximum Operating Temperature
+150 °C
Length
100mm
Base Current
0.7A
Country of Origin
Japan
Product details