Toshiba TTD1415B,S4X(S Dual PNP Darlington Transistor, 7 A 100 V HFE:1000, 3-Pin TO-220SIS

RS Stock No.: 144-5248Brand: ToshibaManufacturers Part No.: TTD1415B,S4X(S
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Technical Document

Specifications

Brand

Toshiba

Transistor Type

PNP

Maximum Continuous Collector Current

7 A

Maximum Collector Emitter Voltage

100 V

Maximum Emitter Base Voltage

6 V

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Configuration

Single

Number of Elements per Chip

2

Minimum DC Current Gain

1000

Maximum Base Emitter Saturation Voltage

2 V

Maximum Collector Base Voltage

120 V

Maximum Collector Emitter Saturation Voltage

2 V

Maximum Collector Cut-off Current

2µA

Height

15mm

Width

4.5mm

Maximum Power Dissipation

25 W @ 25 °C

Dimensions

10 x 4.5 x 15mm

Maximum Operating Temperature

+150 °C

Length

100mm

Base Current

0.7A

Country of Origin

Japan

Product details

NPN Darlington Transistors, Toshiba

Bipolar Transistors, Toshiba

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AED 2.50

Each (In a Pack of 10) (ex VAT)

AED 2.625

Each (In a Pack of 10) (inc VAT)

Toshiba TTD1415B,S4X(S Dual PNP Darlington Transistor, 7 A 100 V HFE:1000, 3-Pin TO-220SIS

AED 2.50

Each (In a Pack of 10) (ex VAT)

AED 2.625

Each (In a Pack of 10) (inc VAT)

Toshiba TTD1415B,S4X(S Dual PNP Darlington Transistor, 7 A 100 V HFE:1000, 3-Pin TO-220SIS
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Pack
10 - 20AED 2.50AED 25.00
30+AED 2.20AED 22.00

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Technical Document

Specifications

Brand

Toshiba

Transistor Type

PNP

Maximum Continuous Collector Current

7 A

Maximum Collector Emitter Voltage

100 V

Maximum Emitter Base Voltage

6 V

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Configuration

Single

Number of Elements per Chip

2

Minimum DC Current Gain

1000

Maximum Base Emitter Saturation Voltage

2 V

Maximum Collector Base Voltage

120 V

Maximum Collector Emitter Saturation Voltage

2 V

Maximum Collector Cut-off Current

2µA

Height

15mm

Width

4.5mm

Maximum Power Dissipation

25 W @ 25 °C

Dimensions

10 x 4.5 x 15mm

Maximum Operating Temperature

+150 °C

Length

100mm

Base Current

0.7A

Country of Origin

Japan

Product details

NPN Darlington Transistors, Toshiba

Bipolar Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more