N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Vishay 2N7002K-T1-GE3

RS Stock No.: 787-9058PBrand: VishayManufacturers Part No.: 2N7002K-T1-GE3
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

350 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

0.4 nC @ 4.5 V

Transistor Material

Si

Width

1.4mm

Minimum Operating Temperature

-55 °C

Height

1.02mm

Product details

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

AED 0.35

Each (Supplied on a Reel) (ex VAT)

AED 0.368

Each (Supplied on a Reel) (inc VAT)

N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Vishay 2N7002K-T1-GE3
Select packaging type

AED 0.35

Each (Supplied on a Reel) (ex VAT)

AED 0.368

Each (Supplied on a Reel) (inc VAT)

N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Vishay 2N7002K-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

350 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

0.4 nC @ 4.5 V

Transistor Material

Si

Width

1.4mm

Minimum Operating Temperature

-55 °C

Height

1.02mm

Product details

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor