Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.1 A
Maximum Drain Source Voltage
50 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.51mm
Typical Gate Charge @ Vgs
17 nC @ 10 V
Height
15.49mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
AED 6.80
Each (In a Tube of 50) (ex VAT)
AED 7.14
Each (In a Tube of 50) (inc VAT)
50
AED 6.80
Each (In a Tube of 50) (ex VAT)
AED 7.14
Each (In a Tube of 50) (inc VAT)
50
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | AED 6.80 | AED 340.00 |
100 - 200 | AED 6.45 | AED 322.50 |
250+ | AED 6.15 | AED 307.50 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.1 A
Maximum Drain Source Voltage
50 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.51mm
Typical Gate Charge @ Vgs
17 nC @ 10 V
Height
15.49mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details