N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP Vishay IRFD110PBF

RS Stock No.: 541-1039PBrand: VishayManufacturers Part No.: IRFD110PBF
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

100 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

5mm

Width

6.29mm

Minimum Operating Temperature

-55 °C

Height

3.37mm

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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P.O.A.

N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP Vishay IRFD110PBF
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P.O.A.

N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP Vishay IRFD110PBF
Stock information temporarily unavailable.
Select packaging type

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

100 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

5mm

Width

6.29mm

Minimum Operating Temperature

-55 °C

Height

3.37mm

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor