N-Channel MOSFET, 1.3 A, 100 V, 4-Pin HVMDIP Vishay IRFD120PBF
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
100 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
16 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5mm
Width
6.29mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
3.37mm
Country of Origin
Philippines
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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AED 6.35
Each (ex VAT)
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AED 6.35
Each (ex VAT)
AED 6.67
Each (inc VAT)
1
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| quantity | Unit price |
|---|---|
| 1 - 9 | AED 6.35 |
| 10 - 49 | AED 5.90 |
| 50 - 99 | AED 5.65 |
| 100 - 249 | AED 5.15 |
| 250+ | AED 4.75 |
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Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
100 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
16 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5mm
Width
6.29mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
3.37mm
Country of Origin
Philippines
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products