P-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP Vishay IRFD9120PBF

RS Stock No.: 541-0553Brand: VishayManufacturers Part No.: IRFD9120PBF
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

100 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

18 nC @ 10 V

Maximum Operating Temperature

+175 °C

Length

5mm

Width

6.29mm

Transistor Material

Si

Height

3.37mm

Minimum Operating Temperature

-55 °C

Country of Origin

Philippines

Product details

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

AED 7.35

Each (ex VAT)

AED 7.72

Each (inc VAT)

P-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP Vishay IRFD9120PBF

AED 7.35

Each (ex VAT)

AED 7.72

Each (inc VAT)

P-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP Vishay IRFD9120PBF
Stock information temporarily unavailable.

Buy in bulk

quantityUnit price
1 - 9AED 7.35
10 - 49AED 7.15
50 - 99AED 7.00
100 - 249AED 6.70
250+AED 6.60

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

100 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

18 nC @ 10 V

Maximum Operating Temperature

+175 °C

Length

5mm

Width

6.29mm

Transistor Material

Si

Height

3.37mm

Minimum Operating Temperature

-55 °C

Country of Origin

Philippines

Product details

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor