Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.1 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Typical Gate Charge @ Vgs
24 nC @ 10 V
Height
9.8mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Stock information temporarily unavailable.
Please check again later.
AED 6.00
Each (In a Tube of 50) (ex VAT)
AED 6.30
Each (In a Tube of 50) (inc VAT)
50
AED 6.00
Each (In a Tube of 50) (ex VAT)
AED 6.30
Each (In a Tube of 50) (inc VAT)
50
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | AED 6.00 | AED 300.00 |
100 - 200 | AED 5.15 | AED 257.50 |
250+ | AED 4.80 | AED 240.00 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.1 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Typical Gate Charge @ Vgs
24 nC @ 10 V
Height
9.8mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details