P-Channel MOSFET, 2.8 A, 30 V, 6-Pin SOT-363 (SC-70) Vishay SI1471DH-T1-GE3

RS Stock No.: 710-3226Brand: VishayManufacturers Part No.: SI1471DH-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

2.8 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-363 (SC-70)

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

6.5 nC @ 4.5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2mm

Width

1.25mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1mm

Country of Origin

China

Product details

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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P.O.A.

P-Channel MOSFET, 2.8 A, 30 V, 6-Pin SOT-363 (SC-70) Vishay SI1471DH-T1-GE3
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P.O.A.

P-Channel MOSFET, 2.8 A, 30 V, 6-Pin SOT-363 (SC-70) Vishay SI1471DH-T1-GE3
Stock information temporarily unavailable.
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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

2.8 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-363 (SC-70)

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

6.5 nC @ 4.5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2mm

Width

1.25mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1mm

Country of Origin

China

Product details

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor