Technical Document
Specifications
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
400 mA, 700 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.48 Ω, 578 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
340 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
1.2 nC @ 10 V, 1.9 nC @ 10 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1mm
Minimum Operating Temperature
-55 °C
Product details
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
AED 0.55
Each (In a Pack of 20) (ex VAT)
AED 0.578
Each (In a Pack of 20) (inc VAT)
20
AED 0.55
Each (In a Pack of 20) (ex VAT)
AED 0.578
Each (In a Pack of 20) (inc VAT)
20
Technical Document
Specifications
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
400 mA, 700 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.48 Ω, 578 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
340 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
1.2 nC @ 10 V, 1.9 nC @ 10 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1mm
Minimum Operating Temperature
-55 °C
Product details