Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.6 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
51 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
5.8 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.02mm
Product details
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Stock information temporarily unavailable.
Please check again later.
AED 1.50
Each (Supplied on a Reel) (ex VAT)
AED 1.575
Each (Supplied on a Reel) (inc VAT)
20
AED 1.50
Each (Supplied on a Reel) (ex VAT)
AED 1.575
Each (Supplied on a Reel) (inc VAT)
20
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
20 - 180 | AED 1.50 | AED 30.00 |
200 - 480 | AED 1.45 | AED 29.00 |
500 - 980 | AED 1.30 | AED 26.00 |
1000 - 1980 | AED 1.20 | AED 24.00 |
2000+ | AED 1.15 | AED 23.00 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.6 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
51 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
5.8 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.02mm
Product details