Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.7 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
67.5 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
23.8 nC @ 8 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-50 °C
Height
1.02mm
Country of Origin
China
Product details
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
AED 1.30
Each (Supplied on a Reel) (ex VAT)
AED 1.365
Each (Supplied on a Reel) (inc VAT)
50
AED 1.30
Each (Supplied on a Reel) (ex VAT)
AED 1.365
Each (Supplied on a Reel) (inc VAT)
50
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
50 - 450 | AED 1.30 | AED 65.00 |
500 - 1200 | AED 0.90 | AED 45.00 |
1250 - 2450 | AED 0.70 | AED 35.00 |
2500 - 4950 | AED 0.65 | AED 32.50 |
5000+ | AED 0.55 | AED 27.50 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.7 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
67.5 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
23.8 nC @ 8 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-50 °C
Height
1.02mm
Country of Origin
China
Product details