N-Channel MOSFET, 12.7 A, 25 V, 8-Pin SOIC Vishay SI4116DY-T1-GE3

RS Stock No.: 710-3317Brand: VishayManufacturers Part No.: SI4116DY-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

12.7 A

Maximum Drain Source Voltage

25 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Width

4mm

Transistor Material

Si

Typical Gate Charge @ Vgs

17.5 nC @ 4.5 V, 37 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

1.55mm

Country of Origin

China

Product details

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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AED 5.10

Each (In a Pack of 5) (ex VAT)

AED 5.355

Each (In a Pack of 5) (inc VAT)

N-Channel MOSFET, 12.7 A, 25 V, 8-Pin SOIC Vishay SI4116DY-T1-GE3
Select packaging type

AED 5.10

Each (In a Pack of 5) (ex VAT)

AED 5.355

Each (In a Pack of 5) (inc VAT)

N-Channel MOSFET, 12.7 A, 25 V, 8-Pin SOIC Vishay SI4116DY-T1-GE3
Stock information temporarily unavailable.
Select packaging type

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quantityUnit pricePer Pack
5 - 45AED 5.10AED 25.50
50 - 245AED 4.80AED 24.00
250 - 495AED 4.35AED 21.75
500 - 1245AED 4.10AED 20.50
1250+AED 3.90AED 19.50

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

12.7 A

Maximum Drain Source Voltage

25 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Width

4mm

Transistor Material

Si

Typical Gate Charge @ Vgs

17.5 nC @ 4.5 V, 37 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

1.55mm

Country of Origin

China

Product details

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor