N-Channel MOSFET, 8.7 A, 500 V, 3-Pin TO-220AB Vishay SIHP8N50D-GE3

RS Stock No.: 787-9181PBrand: VishayManufacturers Part No.: SIHP8N50D-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8.7 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

850 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

156 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

10.51mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Width

4.65mm

Transistor Material

Si

Number of Elements per Chip

1

Height

9.01mm

Series

D Series

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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P.O.A.

N-Channel MOSFET, 8.7 A, 500 V, 3-Pin TO-220AB Vishay SIHP8N50D-GE3
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P.O.A.

N-Channel MOSFET, 8.7 A, 500 V, 3-Pin TO-220AB Vishay SIHP8N50D-GE3
Stock information temporarily unavailable.
Select packaging type

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8.7 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

850 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

156 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

10.51mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Width

4.65mm

Transistor Material

Si

Number of Elements per Chip

1

Height

9.01mm

Series

D Series

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor