Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8.7 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.51mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
4.65mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.01mm
Product details
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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AED 5.75
Each (In a Pack of 5) (ex VAT)
AED 6.038
Each (In a Pack of 5) (inc VAT)
5
AED 5.75
Each (In a Pack of 5) (ex VAT)
AED 6.038
Each (In a Pack of 5) (inc VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | AED 5.75 | AED 28.75 |
50 - 120 | AED 5.20 | AED 26.00 |
125 - 245 | AED 4.60 | AED 23.00 |
250 - 495 | AED 4.35 | AED 21.75 |
500+ | AED 4.15 | AED 20.75 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8.7 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.51mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
4.65mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.01mm
Product details