Vishay VS-GB75YF120N Dual Half Bridge IGBT Module, 100 A 1200 V, 49-Pin ECONO2, PCB Mount

RS Stock No.: 873-2339Brand: VishayManufacturers Part No.: VS-GB75YF120N
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Technical Document

Specifications

Brand

Vishay

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

480 W

Package Type

ECONO2

Configuration

Dual Half Bridge

Mounting Type

PCB Mount

Channel Type

N

Pin Count

49

Switching Speed

8 to 60kHz

Transistor Configuration

Dual Half Bridge

Dimensions

107.8 x 45.4 x 17mm

Maximum Operating Temperature

+150 °C

Product details

IGBT Modules, Vishay

Vishay’s high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.

Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.

Wide range of industry-standard package styles
Direct mount on heat sink
Choice of PT, NPT, and Trench IGBT technologies
Low-VCE(on) IGBT
Switching frequency from 1 kHz to 150 kHz
Rugged transient performance
High isolation voltage up to 3500 V
100 % lead (Pb)-free and RoHS-compliant
Low thermal resistance
Wide operating temperature range (-40 °C to +175 °C)

IGBT Modules, Vishay

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Stock information temporarily unavailable.

AED 1,399.05

Each (ex VAT)

AED 1,469.00

Each (inc VAT)

Vishay VS-GB75YF120N Dual Half Bridge IGBT Module, 100 A 1200 V, 49-Pin ECONO2, PCB Mount

AED 1,399.05

Each (ex VAT)

AED 1,469.00

Each (inc VAT)

Vishay VS-GB75YF120N Dual Half Bridge IGBT Module, 100 A 1200 V, 49-Pin ECONO2, PCB Mount
Stock information temporarily unavailable.

Buy in bulk

quantityUnit price
1 - 5AED 1,399.05
6 - 11AED 1,045.70
12 - 23AED 994.00
24 - 35AED 943.40
36+AED 898.75

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Technical Document

Specifications

Brand

Vishay

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

480 W

Package Type

ECONO2

Configuration

Dual Half Bridge

Mounting Type

PCB Mount

Channel Type

N

Pin Count

49

Switching Speed

8 to 60kHz

Transistor Configuration

Dual Half Bridge

Dimensions

107.8 x 45.4 x 17mm

Maximum Operating Temperature

+150 °C

Product details

IGBT Modules, Vishay

Vishay’s high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.

Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.

Wide range of industry-standard package styles
Direct mount on heat sink
Choice of PT, NPT, and Trench IGBT technologies
Low-VCE(on) IGBT
Switching frequency from 1 kHz to 150 kHz
Rugged transient performance
High isolation voltage up to 3500 V
100 % lead (Pb)-free and RoHS-compliant
Low thermal resistance
Wide operating temperature range (-40 °C to +175 °C)

IGBT Modules, Vishay

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.