SiC N-Channel MOSFET, 35 A, 1000 V, 4-Pin TO-247-4 Wolfspeed C3M0065100K
Technical Document
Specifications
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
1000 V
Series
C3M
Package Type
TO-247-4
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
113.5 W
Maximum Gate Source Voltage
-8 V, +19 V
Transistor Material
SiC
Length
16.13mm
Typical Gate Charge @ Vgs
35 nC @ 15 V, 35 nC @ 4 V
Maximum Operating Temperature
+150 °C
Width
5.21mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.8V
Height
23.6mm
Product details
Silicon Carbide Power MOSFET, C3M Series, Cree Inc.
New C3M Silicon Carbide (SiC) MOSFET technology
Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range
New low-impedance package with driver source
8 mm of creepage/clearance between Drain and Source
High-speed switching with low output capacitance
High blocking voltage with low Drain-Source On-State Resistance
Avalanche ruggedness
Fast intrinsic diode with low Reverse Recovery
MOSFET Transistors, Cree Inc.
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AED 88.80
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AED 93.24
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AED 88.80
Each (ex VAT)
AED 93.24
Each (inc VAT)
1
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| quantity | Unit price |
|---|---|
| 1 - 24 | AED 88.80 |
| 25 - 74 | AED 81.05 |
| 75 - 149 | AED 78.85 |
| 150+ | AED 76.95 |
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Technical Document
Specifications
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
1000 V
Series
C3M
Package Type
TO-247-4
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
113.5 W
Maximum Gate Source Voltage
-8 V, +19 V
Transistor Material
SiC
Length
16.13mm
Typical Gate Charge @ Vgs
35 nC @ 15 V, 35 nC @ 4 V
Maximum Operating Temperature
+150 °C
Width
5.21mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.8V
Height
23.6mm
Product details
Silicon Carbide Power MOSFET, C3M Series, Cree Inc.
New C3M Silicon Carbide (SiC) MOSFET technology
Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range
New low-impedance package with driver source
8 mm of creepage/clearance between Drain and Source
High-speed switching with low output capacitance
High blocking voltage with low Drain-Source On-State Resistance
Avalanche ruggedness
Fast intrinsic diode with low Reverse Recovery
MOSFET Transistors, Cree Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products