IGBT Transistors

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Part Details Brand Maximum Continuous Collector Current Recently Introduced Maximum Collector Emitter Voltage Maximum Gate Emitter Voltage Maximum Power Dissipation Number of Transistors Package Type Mounting Type Channel Type Pin Count Switching Speed Transistor Configuration Length Width Height Dimensions Energy Rating Gate Capacitance Maximum Operating Temperature Minimum Operating Temperature Automotive Standard
Infineon IKW50N60T IGBT, 100 A 600 V, 3-Pin TO-247 Infineon 100 A Recently Introduced 600 V ±20V 333 W - TO-247 Through Hole - 3 - - 16.03mm 21.1mm 5.16mm 16.03 x 21.1 x 5.16mm - - +175 °C -40 °C -
Infineon IGW50N60TPXKSA1 IGBT, 80 A 600 V, 3-Pin TO-247 Infineon 80 A Recently Introduced 600 V ±20V 319.2 W 1 TO-247 Through Hole N 3 30kHz Single 16.13mm 5.21mm 21.1mm 16.13 x 5.21 x 21.1mm 2.38mJ 1950pF +175 °C -40 °C -
Infineon IGW50N60TPXKSA1 IGBT, 80 A 600 V, 3-Pin TO-247 Infineon 80 A Recently Introduced 600 V ±20V 319.2 W 1 TO-247 Through Hole N 3 30kHz Single 16.13mm 5.21mm 21.1mm 16.13 x 5.21 x 21.1mm 2.38mJ 1950pF +175 °C -40 °C -
Infineon IKW30N60DTPXKSA1 IGBT, 53 A 600 V, 3-Pin TO-247 Infineon 53 A Recently Introduced 600 V ±20V 200 W 1 TO-247 Through Hole N 3 30kHz Single 16.13mm 5.21mm 21.1mm 16.13 x 5.21 x 21.1mm 1.13mJ 1050pF +175 °C -40 °C -
Infineon IKW30N60DTPXKSA1 IGBT, 53 A 600 V, 3-Pin TO-247 Infineon 53 A Recently Introduced 600 V ±20V 200 W 1 TO-247 Through Hole N 3 30kHz Single 16.13mm 5.21mm 21.1mm 16.13 x 5.21 x 21.1mm 1.13mJ 1050pF +175 °C -40 °C -
Infineon IKW30N65ES5XKSA1 IGBT, 62 A 650 V, 3-Pin TO-247 Infineon 62 A Recently Introduced 650 V ±20 V, ±30 (Transient) V 188 W 1 TO-247 Through Hole N 3 30kHz Single 16.13mm 5.21mm 21.1mm 16.13 x 5.21 x 21.1mm 0.88mJ 1800pF +175 °C -40 °C -
Infineon IKW30N65ES5XKSA1 IGBT, 62 A 650 V, 3-Pin TO-247 Infineon 62 A Recently Introduced 650 V ±20 V, ±30 (Transient) V 188 W 1 TO-247 Through Hole N 3 30kHz Single 16.13mm 5.21mm 21.1mm 16.13 x 5.21 x 21.1mm 0.88mJ 1800pF +175 °C -40 °C -
Infineon IKW30N65WR5XKSA1 IGBT, 60 A 650 V, 3-Pin TO-247 Infineon 60 A Recently Introduced 650 V ±20V 185 W 1 TO-247 Through Hole N 3 60kHz Single 16.13mm 5.21mm 21.1mm 16.13 x 5.21 x 21.1mm 1.32mJ 3700pF +175 °C -40 °C -
Infineon IKW30N65WR5XKSA1 IGBT, 60 A 650 V, 3-Pin TO-247 Infineon 60 A Recently Introduced 650 V ±20V 185 W 1 TO-247 Through Hole N 3 60kHz Single 16.13mm 5.21mm 21.1mm 16.13 x 5.21 x 21.1mm 1.32mJ 3700pF +175 °C -40 °C -
Infineon IKW40N65ES5XKSA1 IGBT, 79 A 650 V, 3-Pin TO-247 Infineon 79 A Recently Introduced 650 V ±20 V, ±30 (Transient) V 230 W 1 TO-247 Through Hole N 3 30kHz Single 16.13mm 5.21mm 21.1mm 16.13 x 5.21 x 21.1mm 1.26mJ 2500pF +175 °C -40 °C -
Infineon IKW40N65ES5XKSA1 IGBT, 79 A 650 V, 3-Pin TO-247 Infineon 79 A Recently Introduced 650 V ±20 V, ±30 (Transient) V 230 W 1 TO-247 Through Hole N 3 30kHz Single 16.13mm 5.21mm 21.1mm 16.13 x 5.21 x 21.1mm 1.26mJ 2500pF +175 °C -40 °C -
Infineon IKW50N65WR5XKSA1 IGBT, 80 A 650 V, 3-Pin TO-247 Infineon 80 A Recently Introduced 650 V ±20V 282 W 1 TO-247 Through Hole N 3 60kHz Single 16.13mm 5.21mm 21.1mm 16.13 x 5.21 x 21.1mm 1.06mJ 6140pF +175 °C -40 °C -
Infineon IKW50N65WR5XKSA1 IGBT, 80 A 650 V, 3-Pin TO-247 Infineon 80 A Recently Introduced 650 V ±20V 282 W 1 TO-247 Through Hole N 3 60kHz Single 16.13mm 5.21mm 21.1mm 16.13 x 5.21 x 21.1mm 1.06mJ 6140pF +175 °C -40 °C -
Infineon IKW75N65ES5XKSA1 IGBT, 80 A 650 V, 3-Pin TO-247 Infineon 80 A Recently Introduced 650 V ±20 V, ±30 (Transient) V 395 W 1 TO-247 Through Hole N 3 30kHz Single 16.13mm 5.21mm 21.1mm 16.13 x 5.21 x 21.1mm 3.35mJ 4500pF +175 °C -40 °C -
Infineon IKW75N65ES5XKSA1 IGBT, 80 A 650 V, 3-Pin TO-247 Infineon 80 A Recently Introduced 650 V ±20 V, ±30 (Transient) V 395 W 1 TO-247 Through Hole N 3 30kHz Single 16.13mm 5.21mm 21.1mm 16.13 x 5.21 x 21.1mm 3.35mJ 4500pF +175 °C -40 °C -
ON Semiconductor FGB40T65SPD_F085 IGBT, 40 A 650 V, 2+Tab-Pin TO-263 ON Semiconductor 40 A Recently Introduced 650 V ±20V 267 W 1 TO-263 Surface Mount N 2+Tab - Single 10.67mm 9.65mm 4.83mm 10.67 x 9.65 x 4.83mm - 1520pF +175 °C -55 °C AEC-Q101
ON Semiconductor FGB40T65SPD_F085 P-channel IGBT, 80 A 650 V, 2+Tab-Pin TO-263 ON Semiconductor 80 A Recently Introduced 650 V ±20V 267 W 1 TO-263 Surface Mount P 2+Tab - Single 10.67mm 9.65mm 4.83mm 10.67 x 9.65 x 4.83mm - 1520pF +175 °C -55 °C AEC-Q101
Infineon IGW30N60TPXKSA1 IGBT, 53 A 600 V, 3-Pin TO-247 Infineon 53 A Recently Introduced 600 V ±20V 200 W 1 TO-247 Through Hole N 3 30kHz Single 16.13mm 5.21mm 21.1mm 16.13 x 5.21 x 21.1mm 1.13mJ 1050pF +175 °C -40 °C -
Infineon IGW40N60TPXKSA1 IGBT, 67 A 600 V, 3-Pin TO-247 Infineon 67 A Recently Introduced 600 V ±20V 246 W 1 TO-247 Through Hole N 3 30kHz Single 16.13mm 5.21mm 21.1mm 16.13 x 5.21 x 21.1mm 1.67mJ 1400pF +175 °C -40 °C -
Infineon IKW40N60DTPXKSA1 IGBT, 67 A 600 V, 3-Pin TO-247 Infineon 67 A Recently Introduced 600 V ±20V 246 W 1 TO-247 Through Hole N 3 30kHz Single 16.13mm 5.21mm 21.1mm 16.13 x 5.21 x 21.1mm 1.67mJ 1400pF +175 °C -40 °C -
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