MOSFET Transistors

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Part Details Brand Channel Type Recently Introduced Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Typical Turn-Off Delay Time Dimensions Typical Turn-On Delay Time Forward Transconductance Series Height Width Length Forward Diode Voltage Typical Power Gain Maximum Operating Temperature Minimum Operating Temperature Number of Elements per Chip Transistor Material
IXYS IXFL100N50P N-channel MOSFET, 70 A, 500 V PolarHVTM HiPerFET, 3-Pin ISOPLUS264
  • RS Stock No. 125-8039
  • Brand IXYS
  • Mfr. Part No. IXFL100N50P
IXYS N new products only 70 A 500 V 52 mΩ 5V 3V ±30 V ISOPLUS264 Through Hole 3 - Enhancement Power MOSFET 625 W 1700 pF @ 25 V 240 nC @ 10 V 110 ns 20.29 x 5.21 x 26.42mm 36 ns 80s PolarHVTM HiPerFET 26.42mm 5.21mm 20.29mm 1.5V - +150 °C -55 °C 1 -
IXYS IXFN200N10P N-channel MOSFET, 200 A, 100 V Polar HiPerFET, 4-Pin SOT-227B
  • RS Stock No. 125-8040
  • Brand IXYS
  • Mfr. Part No. IXFN200N10P
IXYS N new products only 200 A 100 V 7.5 mΩ 5V 3V ±20 V SOT-227B Surface Mount 4 - Enhancement Power MOSFET 680 W 7600 pF @ 25 V 235 nC @ 10 V 150 ns 38.23 x 25.07 x 9.6mm 30 ns 97s Polar HiPerFET 9.6mm 25.07mm 38.23mm 1.5V - +175 °C -55 °C 1 -
IXYS IXFN360N10T N-channel MOSFET, 360 A, 100 V GigaMOS Trench HiperFET, 4-Pin SOT-227
  • RS Stock No. 125-8041
  • Brand IXYS
  • Mfr. Part No. IXFN360N10T
IXYS N new products only 360 A 100 V 2.6 mΩ 4.5V 2.5V ±20 V SOT-227 Surface Mount 4 - Enhancement Power MOSFET 830 W 3160 pF @ 25 V 525 nC @ 10 V 80 ns 38.23 x 25.07 x 9.6mm 47 ns 180s GigaMOS Trench HiperFET 9.6mm 25.07mm 38.23mm 1.2V - +175 °C -55 °C 1 -
IXYS IXFN360N15T2 N-channel MOSFET, 310 A, 150 V GigaMOS TrenchT2 HiperFET, 4-Pin SOT-227
  • RS Stock No. 125-8042
  • Brand IXYS
  • Mfr. Part No. IXFN360N15T2
IXYS N new products only 310 A 150 V 4 mΩ 5V 2.5V ±20 V SOT-227 Surface Mount 4 - Enhancement Power MOSFET 1.07 kW 3060 pF @ 25 V 715 nC @ 10 V 115 ns 38.23 x 25.07 x 9.6mm 50 ns 230s GigaMOS TrenchT2 HiperFET 9.6mm 25.07mm 38.23mm 1.2V - +175 °C -55 °C 1 -
IXYS IXFN420N10T N-channel MOSFET, 420 A, 100 V GigaMOS Trench HiperFET, 4-Pin SOT-227
  • RS Stock No. 125-8043
  • Brand IXYS
  • Mfr. Part No. IXFN420N10T
IXYS N new products only 420 A 100 V 2.3 mΩ 5V 2.5V ±20 V SOT-227 Surface Mount 4 - Enhancement Power MOSFET 1.07 kW 4390 pF @ 25 V 670 nC @ 10 V 115 ns 38.23 x 25.07 x 9.6mm 47 ns 185s GigaMOS Trench HiperFET 9.6mm 25.07mm 38.23mm 1.2V - +175 °C -55 °C 1 -
IXYS IXFN44N100P N-channel MOSFET, 37 A, 1000 V Polar HiPerFET, 4-Pin SOT-227B
  • RS Stock No. 125-8044
  • Brand IXYS
  • Mfr. Part No. IXFN44N100P
IXYS N new products only 37 A 1000 V 220 mΩ 6.5V 3.5V ±30 V SOT-227B Surface Mount 4 - Enhancement Power MOSFET 890 W 1060 pF @ 25 V 305 nC @ 10 V 90 ns 38.23 x 25.07 x 9.6mm 60 ns 35s Polar HiPerFET 9.6mm 25.07mm 38.23mm 1.5V - +150 °C -55 °C 1 -
IXYS IXFR140N30P N-channel MOSFET, 70 A, 300 V Polar HiPerFET, 3-Pin ISOPLUS247
  • RS Stock No. 125-8045
  • Brand IXYS
  • Mfr. Part No. IXFR140N30P
IXYS N new products only 70 A 300 V 26 mΩ 5V 3V ±20 V ISOPLUS247 Through Hole 3 - Enhancement Power MOSFET 300 W 1830 pF @ 25 V 185 nC @ 10 V 100 ns 16.13 x 5.21 x 21.34mm 30 ns 90s Polar HiPerFET 21.34mm 5.21mm 16.13mm 1.3V - +150 °C -55 °C 1 -
IXYS IXTH110N25T N-channel MOSFET, 110 A, 250 V Trench, 3-Pin TO-247
  • RS Stock No. 125-8047
  • Brand IXYS
  • Mfr. Part No. IXTH110N25T
IXYS N new products only 110 A 250 V 24 mΩ 5V 3V ±20 V TO-247 Through Hole 3 - Enhancement Power MOSFET 694 W 9400 pF @ 25 V 157 nC @ 10 V 60 ns 16.26 x 5.3 x 21.46mm 19 ns 110s Trench 21.46mm 5.3mm 16.26mm 1.2V - +150 °C -55 °C 1 -
IXYS IXTN200N10L2 N-channel MOSFET, 178 A, 100 V Linear L2, 4-Pin SOT-227
  • RS Stock No. 125-8048
  • Brand IXYS
  • Mfr. Part No. IXTN200N10L2
IXYS N new products only 178 A 100 V 11 mΩ 4.5V 2V ±20 V SOT-227 Surface Mount 4 - Enhancement Power MOSFET 830 W 3200 pF @ 25 V 540 nC @ 10 V 127 ns 38.23 x 25.07 x 9.6mm 40 ns 90s Linear L2 9.6mm 25.07mm 38.23mm 1.4V - +150 °C -55 °C 1 -
Infineon BSC009NE2LS5ATMA1 N-channel MOSFET, 100 A, 25 V OptiMOS 5, 8-Pin SuperSO
  • £ 0.678
  • Each (On a Reel of 5000)
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Infineon N new products only 100 A 25 V 1.25 mΩ 2V 1.2V +16 V SuperSO Surface Mount 8 Single Enhancement Power MOSFET 74 W 2900 pF @ 12 V 43 nC @ 10 V 30 ns 5.49 x 6.35 x 1.1mm 4 ns 150s OptiMOS 5 1.1mm 6.35mm 5.49mm 1V - +150 °C -55 °C 1 Si
Infineon BSC009NE2LS5ATMA1 N-channel MOSFET, 100 A, 25 V OptiMOS 5, 8-Pin SuperSO Infineon N new products only 100 A 25 V 1.25 mΩ 2V 1.2V +16 V SuperSO Surface Mount 8 Single Enhancement Power MOSFET 74 W 2900 pF @ 12 V 43 nC @ 10 V 30 ns 5.49 x 6.35 x 1.1mm 4 ns 150s OptiMOS 5 1.1mm 6.35mm 5.49mm 1V - +150 °C -55 °C 1 Si
Infineon BSC009NE2LS5IATMA1 N-channel MOSFET, 100 A, 25 V OptiMOS 5, 8-Pin SuperSO
  • £ 0.692
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Infineon N new products only 100 A 25 V 1.35 mΩ 2V 1.2V +16 V SuperSO Surface Mount 8 Single Enhancement Power MOSFET 74 W 2400 pF @ 12 V 36 nC @ 10 V 27 ns 5.49 x 6.35 x 1.1mm 5 ns 150s OptiMOS 5 1.1mm 6.35mm 5.49mm 0.62V - +150 °C -55 °C 1 Si
Infineon BSC009NE2LS5IATMA1 N-channel MOSFET, 100 A, 25 V OptiMOS 5, 8-Pin SuperSO Infineon N new products only 100 A 25 V 1.35 mΩ 2V 1.2V +16 V SuperSO Surface Mount 8 Single Enhancement Power MOSFET 74 W 2400 pF @ 12 V 36 nC @ 10 V 27 ns 5.49 x 6.35 x 1.1mm 5 ns 150s OptiMOS 5 1.1mm 6.35mm 5.49mm 0.62V - +150 °C -55 °C 1 -
Infineon BSC020N03LSGATMA1 N-channel MOSFET, 100 A, 30 V OptiMOS 3, 8-Pin TDSON
  • £ 0.402
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Infineon N new products only 100 A 30 V 2.9 mΩ 2.2V 1V +20 V TDSON Surface Mount 8 Single Enhancement Power MOSFET 96 W 5400 pF @ 15 V 34 nC @ 4.5 V 42 ns 5.35 x 6.35 x 1.1mm 11 ns 130s OptiMOS 3 1.1mm 6.35mm 5.35mm 1.1V - +150 °C -55 °C 1 -
Infineon BSC020N03LSGATMA1 N-channel MOSFET, 100 A, 30 V OptiMOS 3, 8-Pin TDSON Infineon N new products only 100 A 30 V 2.9 mΩ 2.2V 1V +20 V TDSON Surface Mount 8 Single Enhancement Power MOSFET 96 W 5400 pF @ 15 V 34 nC @ 4.5 V 42 ns 5.35 x 6.35 x 1.1mm 11 ns 130s OptiMOS 3 1.1mm 6.35mm 5.35mm 1.1V - +150 °C -55 °C 1 -
Infineon BSC025N03LSGATMA1 N-channel MOSFET, 100 A, 30 V OptiMOS 3, 8-Pin TDSON Infineon N new products only 100 A 30 V 3.6 mΩ 2.2V 1V +20 V TDSON Surface Mount 8 Single Enhancement Power MOSFET 83 W 4600 pF @ 15 V 27 nC @ 4.5 V 36 ns 5.35 x 6.35 x 1.1mm 10 ns 110s OptiMOS 3 1.1mm 6.35mm 5.35mm 1.1V - +150 °C -55 °C 1 -
Infineon BSC025N03LSGATMA1 N-channel MOSFET, 100 A, 30 V OptiMOS 3, 8-Pin TDSON Infineon N new products only 100 A 30 V 3.6 mΩ 2.2V 1V +20 V TDSON Surface Mount 8 Single Enhancement Power MOSFET 83 W 4600 pF @ 15 V 27 nC @ 4.5 V 36 ns 5.35 x 6.35 x 1.1mm 10 ns 110s OptiMOS 3 1.1mm 6.35mm 5.35mm 1.1V - +150 °C -55 °C 1 -
Infineon BSC026NE2LS5ATMA1 N-channel MOSFET, 82 A, 25 V OptiMOS 5, 8-Pin SuperSO
  • £ 0.355
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Infineon N new products only 82 A 25 V 4 mΩ 2V 1.2V +16 V SuperSO Surface Mount 8 Single Enhancement Power MOSFET 29 W 780 pF @ 12 V 12 nC @ 10 V 13 ns 5.49 x 6.35 x 1.1mm 3 ns 110s OptiMOS 5 1.1mm 6.35mm 5.49mm 1V - +150 °C -55 °C 1 Si
Infineon BSC026NE2LS5ATMA1 N-channel MOSFET, 82 A, 25 V OptiMOS 5, 8-Pin SuperSO Infineon N new products only 82 A 25 V 4 mΩ 2V 1.2V +16 V SuperSO Surface Mount 8 Single Enhancement Power MOSFET 29 W 780 pF @ 12 V 12 nC @ 10 V 13 ns 5.49 x 6.35 x 1.1mm 3 ns 110s OptiMOS 5 1.1mm 6.35mm 5.49mm 1V - +150 °C -55 °C 1 Si
Infineon BSC032NE2LSATMA1 N-channel MOSFET, 84 A, 25 V OptiMOS, 8-Pin TDSON
  • £ 0.259
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Infineon N new products only 84 A 25 V 4.8 mΩ 2V 1.2V +20 V TDSON Surface Mount 8 Single Enhancement Power MOSFET 37 W 1200 pF @ 12 V 7.7 nC @ 4.5 V 15 ns 5.35 x 6.35 x 1.1mm 3.3 ns 93s OptiMOS 1.1mm 6.35mm 5.35mm 1V - +150 °C -55 °C 1 -
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