MOSFET Transistors

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Part Details Brand Channel Type Recently Introduced Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Transistor Configuration Pin Count Channel Mode Category Maximum Power Dissipation Typical Gate Charge @ Vgs Typical Input Capacitance @ Vds Dimensions Minimum Operating Temperature Width Forward Diode Voltage Height Series Typical Turn-On Delay Time Typical Turn-Off Delay Time Typical Power Gain Number of Elements per Chip Maximum Operating Temperature Transistor Material Forward Transconductance Length
IXYS IXFL100N50P N-channel MOSFET, 70 A, 500 V PolarHVTM HiPerFET, 3-Pin ISOPLUS264
  • RS Stock No. 125-8039
  • Brand IXYS
  • Mfr. Part No. IXFL100N50P
IXYS N new products only 70 A 500 V 52 mΩ 5V 3V ±30 V ISOPLUS264 Through Hole - 3 Enhancement Power MOSFET 625 W 240 nC @ 10 V 1700 pF @ 25 V 20.29 x 5.21 x 26.42mm -55 °C 5.21mm 1.5V 26.42mm PolarHVTM HiPerFET 36 ns 110 ns - 1 +150 °C - 80s 20.29mm
IXYS IXFN200N10P N-channel MOSFET, 200 A, 100 V Polar HiPerFET, 4-Pin SOT-227B
  • RS Stock No. 125-8040
  • Brand IXYS
  • Mfr. Part No. IXFN200N10P
IXYS N new products only 200 A 100 V 7.5 mΩ 5V 3V ±20 V SOT-227B Surface Mount - 4 Enhancement Power MOSFET 680 W 235 nC @ 10 V 7600 pF @ 25 V 38.23 x 25.07 x 9.6mm -55 °C 25.07mm 1.5V 9.6mm Polar HiPerFET 30 ns 150 ns - 1 +175 °C - 97s 38.23mm
IXYS IXFN360N10T N-channel MOSFET, 360 A, 100 V GigaMOS Trench HiperFET, 4-Pin SOT-227
  • RS Stock No. 125-8041
  • Brand IXYS
  • Mfr. Part No. IXFN360N10T
IXYS N new products only 360 A 100 V 2.6 mΩ 4.5V 2.5V ±20 V SOT-227 Surface Mount - 4 Enhancement Power MOSFET 830 W 525 nC @ 10 V 3160 pF @ 25 V 38.23 x 25.07 x 9.6mm -55 °C 25.07mm 1.2V 9.6mm GigaMOS Trench HiperFET 47 ns 80 ns - 1 +175 °C - 180s 38.23mm
IXYS IXFN360N15T2 N-channel MOSFET, 310 A, 150 V GigaMOS TrenchT2 HiperFET, 4-Pin SOT-227
  • RS Stock No. 125-8042
  • Brand IXYS
  • Mfr. Part No. IXFN360N15T2
IXYS N new products only 310 A 150 V 4 mΩ 5V 2.5V ±20 V SOT-227 Surface Mount - 4 Enhancement Power MOSFET 1.07 kW 715 nC @ 10 V 3060 pF @ 25 V 38.23 x 25.07 x 9.6mm -55 °C 25.07mm 1.2V 9.6mm GigaMOS TrenchT2 HiperFET 50 ns 115 ns - 1 +175 °C - 230s 38.23mm
IXYS IXFN420N10T N-channel MOSFET, 420 A, 100 V GigaMOS Trench HiperFET, 4-Pin SOT-227
  • RS Stock No. 125-8043
  • Brand IXYS
  • Mfr. Part No. IXFN420N10T
IXYS N new products only 420 A 100 V 2.3 mΩ 5V 2.5V ±20 V SOT-227 Surface Mount - 4 Enhancement Power MOSFET 1.07 kW 670 nC @ 10 V 4390 pF @ 25 V 38.23 x 25.07 x 9.6mm -55 °C 25.07mm 1.2V 9.6mm GigaMOS Trench HiperFET 47 ns 115 ns - 1 +175 °C - 185s 38.23mm
IXYS IXFN44N100P N-channel MOSFET, 37 A, 1000 V Polar HiPerFET, 4-Pin SOT-227B
  • RS Stock No. 125-8044
  • Brand IXYS
  • Mfr. Part No. IXFN44N100P
IXYS N new products only 37 A 1000 V 220 mΩ 6.5V 3.5V ±30 V SOT-227B Surface Mount - 4 Enhancement Power MOSFET 890 W 305 nC @ 10 V 1060 pF @ 25 V 38.23 x 25.07 x 9.6mm -55 °C 25.07mm 1.5V 9.6mm Polar HiPerFET 60 ns 90 ns - 1 +150 °C - 35s 38.23mm
IXYS IXFR140N30P N-channel MOSFET, 70 A, 300 V Polar HiPerFET, 3-Pin ISOPLUS247
  • RS Stock No. 125-8045
  • Brand IXYS
  • Mfr. Part No. IXFR140N30P
IXYS N new products only 70 A 300 V 26 mΩ 5V 3V ±20 V ISOPLUS247 Through Hole - 3 Enhancement Power MOSFET 300 W 185 nC @ 10 V 1830 pF @ 25 V 16.13 x 5.21 x 21.34mm -55 °C 5.21mm 1.3V 21.34mm Polar HiPerFET 30 ns 100 ns - 1 +150 °C - 90s 16.13mm
IXYS IXTH110N25T N-channel MOSFET, 110 A, 250 V Trench, 3-Pin TO-247
  • RS Stock No. 125-8047
  • Brand IXYS
  • Mfr. Part No. IXTH110N25T
IXYS N new products only 110 A 250 V 24 mΩ 5V 3V ±20 V TO-247 Through Hole - 3 Enhancement Power MOSFET 694 W 157 nC @ 10 V 9400 pF @ 25 V 16.26 x 5.3 x 21.46mm -55 °C 5.3mm 1.2V 21.46mm Trench 19 ns 60 ns - 1 +150 °C - 110s 16.26mm
IXYS IXTN200N10L2 N-channel MOSFET, 178 A, 100 V Linear L2, 4-Pin SOT-227
  • RS Stock No. 125-8048
  • Brand IXYS
  • Mfr. Part No. IXTN200N10L2
IXYS N new products only 178 A 100 V 11 mΩ 4.5V 2V ±20 V SOT-227 Surface Mount - 4 Enhancement Power MOSFET 830 W 540 nC @ 10 V 3200 pF @ 25 V 38.23 x 25.07 x 9.6mm -55 °C 25.07mm 1.4V 9.6mm Linear L2 40 ns 127 ns - 1 +150 °C - 90s 38.23mm
Infineon BSC009NE2LS5ATMA1 N-channel MOSFET, 100 A, 25 V OptiMOS 5, 8-Pin SuperSO
  • £ 0.678
  • Each (On a Reel of 5000)
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Infineon N new products only 100 A 25 V 1.25 mΩ 2V 1.2V +16 V SuperSO Surface Mount Single 8 Enhancement Power MOSFET 74 W 43 nC @ 10 V 2900 pF @ 12 V 5.49 x 6.35 x 1.1mm -55 °C 6.35mm 1V 1.1mm OptiMOS 5 4 ns 30 ns - 1 +150 °C Si 150s 5.49mm
Infineon BSC009NE2LS5ATMA1 N-channel MOSFET, 100 A, 25 V OptiMOS 5, 8-Pin SuperSO Infineon N new products only 100 A 25 V 1.25 mΩ 2V 1.2V +16 V SuperSO Surface Mount Single 8 Enhancement Power MOSFET 74 W 43 nC @ 10 V 2900 pF @ 12 V 5.49 x 6.35 x 1.1mm -55 °C 6.35mm 1V 1.1mm OptiMOS 5 4 ns 30 ns - 1 +150 °C Si 150s 5.49mm
Infineon BSC009NE2LS5IATMA1 N-channel MOSFET, 100 A, 25 V OptiMOS 5, 8-Pin SuperSO
  • £ 0.692
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Infineon N new products only 100 A 25 V 1.35 mΩ 2V 1.2V +16 V SuperSO Surface Mount Single 8 Enhancement Power MOSFET 74 W 36 nC @ 10 V 2400 pF @ 12 V 5.49 x 6.35 x 1.1mm -55 °C 6.35mm 0.62V 1.1mm OptiMOS 5 5 ns 27 ns - 1 +150 °C Si 150s 5.49mm
Infineon BSC009NE2LS5IATMA1 N-channel MOSFET, 100 A, 25 V OptiMOS 5, 8-Pin SuperSO Infineon N new products only 100 A 25 V 1.35 mΩ 2V 1.2V +16 V SuperSO Surface Mount Single 8 Enhancement Power MOSFET 74 W 36 nC @ 10 V 2400 pF @ 12 V 5.49 x 6.35 x 1.1mm -55 °C 6.35mm 0.62V 1.1mm OptiMOS 5 5 ns 27 ns - 1 +150 °C - 150s 5.49mm
Infineon BSC020N03LSGATMA1 N-channel MOSFET, 100 A, 30 V OptiMOS 3, 8-Pin TDSON
  • £ 0.402
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Infineon N new products only 100 A 30 V 2.9 mΩ 2.2V 1V +20 V TDSON Surface Mount Single 8 Enhancement Power MOSFET 96 W 34 nC @ 4.5 V 5400 pF @ 15 V 5.35 x 6.35 x 1.1mm -55 °C 6.35mm 1.1V 1.1mm OptiMOS 3 11 ns 42 ns - 1 +150 °C - 130s 5.35mm
Infineon BSC020N03LSGATMA1 N-channel MOSFET, 100 A, 30 V OptiMOS 3, 8-Pin TDSON Infineon N new products only 100 A 30 V 2.9 mΩ 2.2V 1V +20 V TDSON Surface Mount Single 8 Enhancement Power MOSFET 96 W 34 nC @ 4.5 V 5400 pF @ 15 V 5.35 x 6.35 x 1.1mm -55 °C 6.35mm 1.1V 1.1mm OptiMOS 3 11 ns 42 ns - 1 +150 °C - 130s 5.35mm
Infineon BSC025N03LSGATMA1 N-channel MOSFET, 100 A, 30 V OptiMOS 3, 8-Pin TDSON Infineon N new products only 100 A 30 V 3.6 mΩ 2.2V 1V +20 V TDSON Surface Mount Single 8 Enhancement Power MOSFET 83 W 27 nC @ 4.5 V 4600 pF @ 15 V 5.35 x 6.35 x 1.1mm -55 °C 6.35mm 1.1V 1.1mm OptiMOS 3 10 ns 36 ns - 1 +150 °C - 110s 5.35mm
Infineon BSC025N03LSGATMA1 N-channel MOSFET, 100 A, 30 V OptiMOS 3, 8-Pin TDSON Infineon N new products only 100 A 30 V 3.6 mΩ 2.2V 1V +20 V TDSON Surface Mount Single 8 Enhancement Power MOSFET 83 W 27 nC @ 4.5 V 4600 pF @ 15 V 5.35 x 6.35 x 1.1mm -55 °C 6.35mm 1.1V 1.1mm OptiMOS 3 10 ns 36 ns - 1 +150 °C - 110s 5.35mm
Infineon BSC026NE2LS5ATMA1 N-channel MOSFET, 82 A, 25 V OptiMOS 5, 8-Pin SuperSO
  • £ 0.355
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Infineon N new products only 82 A 25 V 4 mΩ 2V 1.2V +16 V SuperSO Surface Mount Single 8 Enhancement Power MOSFET 29 W 12 nC @ 10 V 780 pF @ 12 V 5.49 x 6.35 x 1.1mm -55 °C 6.35mm 1V 1.1mm OptiMOS 5 3 ns 13 ns - 1 +150 °C Si 110s 5.49mm
Infineon BSC026NE2LS5ATMA1 N-channel MOSFET, 82 A, 25 V OptiMOS 5, 8-Pin SuperSO Infineon N new products only 82 A 25 V 4 mΩ 2V 1.2V +16 V SuperSO Surface Mount Single 8 Enhancement Power MOSFET 29 W 12 nC @ 10 V 780 pF @ 12 V 5.49 x 6.35 x 1.1mm -55 °C 6.35mm 1V 1.1mm OptiMOS 5 3 ns 13 ns - 1 +150 °C Si 110s 5.49mm
Infineon BSC032NE2LSATMA1 N-channel MOSFET, 84 A, 25 V OptiMOS, 8-Pin TDSON
  • £ 0.259
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Infineon N new products only 84 A 25 V 4.8 mΩ 2V 1.2V +20 V TDSON Surface Mount Single 8 Enhancement Power MOSFET 37 W 7.7 nC @ 4.5 V 1200 pF @ 12 V 5.35 x 6.35 x 1.1mm -55 °C 6.35mm 1V 1.1mm OptiMOS 3.3 ns 15 ns - 1 +150 °C - 93s 5.35mm
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