MOSFET Transistors

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Part Details Brand Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Typical Turn-Off Delay Time Dimensions Typical Turn-On Delay Time Forward Transconductance Series Height Width Length Forward Diode Voltage Maximum Operating Temperature Minimum Operating Temperature Number of Elements per Chip Transistor Material
Microchip DN3525N8-G N-channel MOSFET, 360 mA, 250 V Depletion, 4-Pin TO-243AA Microchip N 360 mA 250 V 6 Ω 3.5V - ±20 V TO-243AA Surface Mount 4 Single Depletion - 1.6 W 270 pF @ 25 V - 25 ns 4.6 x 2.6 x 1.6mm 20 ns - - 1.6mm 2.6mm 4.6mm - +150 °C -55 °C 1 Si
Microchip TP2104N3-G P-channel MOSFET, 175 mA, 40 V, 3-Pin TO-92 Microchip P 175 mA 40 V 10 Ω 2V - ±20 V TO-92 Through Hole 3 Single Enhancement - 740 mW 35 pF @ -25 V - 5 ns 5.08 x 4.06 x 5.33mm 4 ns 200s - 5.33mm 4.06mm 5.08mm 2V +150 °C -55 °C 1 Si
Microchip VN2410L-G N-channel MOSFET, 190 mA, 240 V, 3-Pin TO-92 Microchip N 190 mA 240 V 10 Ω 2V - ±20 V TO-92 Through Hole 3 Single Enhancement - 1 W 125 pF @ 25 V - 23 ns 5.2 x 4.19 x 5.33mm 8 ns - - 5.33mm 4.19mm 5.2mm - +150 °C -55 °C 1 Si
Microchip LND150N3-G N-channel MOSFET, 30 mA, 500 V Depletion, 3-Pin TO-92 Microchip N 30 mA 500 V 1 kΩ 3V - ±20 V TO-92 Through Hole 3 Single Depletion Power MOSFET 740 mW 7.5 pF @ 25 V - 100 ns 5.2 x 4.19 x 5.33mm 90 ns - - 5.33mm 4.19mm 5.2mm - +150 °C -55 °C 1 Si
Microchip VP2106N3-G P-channel MOSFET, 250 mA, 60 V, 3-Pin TO-92 Microchip P 250 mA 60 V 15 Ω 3.5V - ±20 V TO-92 Through Hole 3 Single Enhancement - 1 W 45 pF @ -25 V - 5 ns 5.08 x 4.06 x 5.33mm 4 ns 200s - 5.33mm 4.06mm 5.08mm 2V +150 °C -55 °C 1 Si
Microchip VN2222LL-G N-channel MOSFET, 230 mA, 60 V, 3-Pin TO-92 Microchip N 230 mA 60 V 7.5 Ω 2.5V - ±30 V TO-92 Through Hole 3 Single Enhancement - 1 W 60 pF @ 25 V - 10 ns 5.08 x 4.06 x 5.33mm 10 ns 100s - 5.33mm 4.06mm 5.08mm 0.85V +150 °C -55 °C 1 Si
Microchip DN2540N3-G N-channel MOSFET, 120 mA, 400 V Depletion, 3-Pin TO-92 Microchip N 120 mA 400 V 25 Ω 3.5V - ±20 V TO-92 Through Hole 3 Single Depletion - 1 W 200 pF @ 25 V - 15 ns 5.2 x 4.19 x 5.33mm 10 ns - - 5.33mm 4.19mm 5.2mm - +150 °C -55 °C 1 Si
Microchip DN2540N5-G N-channel MOSFET, 500 mA, 400 V Depletion, 3-Pin TO-220 Microchip N 500 mA 400 V 25 Ω 3.5V - ±20 V TO-220 Through Hole 3 Single Depletion - 15 W 200 pF @ 25 V - 15 ns 10.7 x 4.826 x 16.51mm 10 ns - - 16.51mm 4.826mm 10.7mm - +150 °C -55 °C 1 Si
Microchip DN2530N3-G N-channel MOSFET, 175 mA, 300 V Depletion, 3-Pin TO-92 Microchip N 175 mA 300 V 12 Ω 3.5V - ±20 V TO-92 Through Hole 3 Single Depletion - 740 mW 300 pF@ 25 V - 15 ns 5.2 x 4.19 x 5.33mm 10 ns - - 5.33mm 4.19mm 5.2mm - +150 °C -55 °C 1 Si
Microchip DN3535N8-G N-channel MOSFET, 230 mA, 350 V Depletion, 4-Pin TO-243AA Microchip N 230 mA 350 V 10 Ω 3.5V - ±20 V TO-243AA Surface Mount 4 Single Depletion - 1.6 W 360 pF@ 25 V - 20 ns 4.6 x 2.6 x 1.6mm 15 ns - - 1.6mm 2.6mm 4.6mm - +150 °C -55 °C 1 Si
Microchip DN3545N3-G N-channel MOSFET, 130 mA, 450 V Depletion, 3-Pin TO-92 Microchip N 130 mA 450 V 20 Ω 3.5V - ±20 V TO-92 Through Hole 3 Single Depletion - 740 mW 360 pF@ 25 V - 30 ns 5.2 x 4.19 x 5.33mm 20 ns - - 5.33mm 4.19mm 5.2mm - +150 °C -55 °C 1 Si
Microchip 2N7008-G N-channel MOSFET, 230 mA, 60 V, 3-Pin TO-92 Microchip N 230 mA 60 V 7.5 Ω 2.5V 1V ±30 V TO-92 Through Hole 3 Single Enhancement Power MOSFET 1 W 50 pF @ 25 V (Max) - 20 ns 5.08 x 4.06 x 5.33mm 20 ns - - 5.33mm 4.06mm 5.08mm 1.5V +150 °C -55 °C 1 Si
Microchip DN1509N8-G N-channel MOSFET, 360 mA, 90 V Depletion, 4-Pin TO-243AA Microchip N 360 mA 90 V 6 Ω 3.5V - ±20 V TO-243AA Surface Mount 4 Single Depletion - 1.6 W 70 pF @ 25 V - 15 ns 4.6 x 2.6 x 1.6mm 12 ns - - 1.6mm 2.6mm 4.6mm - +150 °C -55 °C 1 Si
Microchip DN2535N3-G N-channel MOSFET, 120 mA, 350 V Depletion, 3-Pin TO-92 Microchip N 120 mA 350 V 25 Ω 3.5V - ±20 V TO-92 Through Hole 3 Single Depletion - 1 W 200 pF @ 25 V - 15 ns 5.2 x 4.19 x 5.33mm 10 ns - - 5.33mm 4.19mm 5.2mm - +150 °C -55 °C 1 Si
Microchip DN2625DK6-G N-channel MOSFET, 1.1 A, 250 V Depletion, 8-Pin DFN Microchip N 1.1 A 250 V 3.5 Ω - - ±20 V DFN Surface Mount 8 Single Depletion Power MOSFET - 800 pF @ 25 V 7.04 nC @ 1.5 V 10 ns 5.1 x 5.1 x 0.85mm 10 ns - - 0.85mm 5.1mm 5.1mm 1.8V +150 °C -55 °C 1 Si
Microchip DN3765K4-G N-channel MOSFET, 300 mA, 650 V Depletion, 3-Pin TO-252 Microchip N 300 mA 650 V 8 Ω 3.5V - ±20 V TO-252 Surface Mount 3 Single Depletion - 2.5 W 825 pF@ 25 V - 75 ns 6.2 x 6.73 x 2.39mm 50 ns - - 2.39mm 6.73mm 6.2mm - +150 °C -55 °C 1 Si
Microchip LND01K1-G N-channel MOSFET, 330 mA, 9 V Depletion, 5-Pin SOT-23 Microchip N 330 mA 9 V 1.4 Ω - - 0.6 V SOT-23 Surface Mount 5 Single Depletion - 360 mW 46 pF - 1 ns 3.05 x 1.75 x 1.3mm 3.8 ns - - 1.3mm 1.75mm 3.05mm - +125 °C -25 °C 1 Si
Microchip LND150N8-G N-channel MOSFET, 30 mA, 500 V Depletion, 4-Pin TO-243AA Microchip N 30 mA 500 V 1 kΩ 3V - ±20 V TO-243AA Surface Mount 4 Single Depletion Power MOSFET 1.6 W 7.5 pF @ 25 V - 100 ns 4.6 x 2.6 x 1.6mm 90 ns - - 1.6mm 2.6mm 4.6mm - +150 °C -55 °C 1 Si
Microchip MCP87022T-U/MF N-channel MOSFET, 100 A, 25 V MCP87, 8-Pin DFN Microchip N 100 A 25 V 2.6 mΩ 1.6V - -8 V, 10 V DFN Surface Mount 8 Single Enhancement Power MOSFET 2.2 W 2310 pF @ 12.5 V 25.5 nC @ 4.5 V 21 ns 5 x 6 x 1mm 7.6 ns - MCP87 1mm 6mm 5mm - +150 °C -55 °C 1 Si
Microchip MCP87050T-U/MF N-channel MOSFET, 100 A, 25 V MCP87, 8-Pin DFN Microchip N 100 A 25 V 6 mΩ 1.6V - -8 V, 10 V DFN Surface Mount 8 Single Enhancement Power MOSFET 2.2 W 1040 pF @ 12.5 V 12.5 nC @ 4.5 V 11 ns 5 x 6 x 1mm 5 ns - MCP87 1mm 6mm 5mm - +150 °C -55 °C 1 Si
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