IGBT Transistors

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Part Details Brand Recently Introduced Maximum Continuous Collector Current Maximum Collector Emitter Voltage Maximum Gate Emitter Voltage Maximum Power Dissipation Package Type Mounting Type Pin Count Switching Speed Transistor Configuration Configuration Length Width Height Dimensions Energy Rating Minimum Operating Temperature Gate Capacitance Maximum Operating Temperature
ON Semiconductor NGTB30N120LWG, IGBT, 60 A 1200 V, 3-Pin TO-247 ON Semiconductor new products only 60 A 1200 V ±20V 260 W TO-247 Through Hole 3 - - Single 16.26mm 5.3mm 21.08mm 16.26 x 5.3 x 21.08mm - -55 °C - +150 °C
ON Semiconductor NGTB40N120FL2WG, IGBT, 80 A 1200 V, 1MHz, 3-Pin TO-247 ON Semiconductor new products only 80 A 1200 V ±20V 535 W TO-247 Through Hole 3 1MHz - Single 16.25mm 5.3mm 21.4mm 16.25 x 5.3 x 21.4mm - -55 °C - +175 °C
ON Semiconductor NGTG50N60FWG, IGBT, 100 A 600 V, 1MHz, 3-Pin TO-247 ON Semiconductor new products only 100 A 600 V ±20V 223 W TO-247 Through Hole 3 1MHz - Single 16.25mm 5.3mm 21.4mm 16.25 x 5.3 x 21.4mm - -55 °C - +150 °C
ON Semiconductor NGTB25N120FL3WG, IGBT, 100 A 1200 V, 1MHz, 3-Pin TO-247 ON Semiconductor new products only 100 A 1200 V ±20V 349 W TO-247 Through Hole 3 1MHz Single Single 16.25mm 5.3mm 21.4mm 16.25 x 5.3 x 21.4mm - -55 °C 3085pF +175 °C
ON Semiconductor NGTB40N120FL3WG, IGBT, 160 A 1200 V, 1MHz, 3-Pin TO-247 ON Semiconductor new products only 160 A 1200 V ±20V 454 W TO-247 Through Hole 3 1MHz Single Single 16.25mm 5.3mm 21.4mm 16.25 x 5.3 x 21.4mm - -55 °C 4912pF +175 °C
ON Semiconductor NGTB40N120L3WG, IGBT, 160 A 1200 V, 1MHz, 3-Pin TO-247 ON Semiconductor new products only 160 A 1200 V ±20V 454 W TO-247 Through Hole 3 1MHz Single Single 16.25mm 5.3mm 21.34mm 16.25 x 5.3 x 21.34mm - -55 °C 4912pF +175 °C
ON Semiconductor NGB8245NT4G, IGBT, 50 A 500 V, 3-Pin D2PAK ON Semiconductor - 50 A 500 V 500V 150 W D2PAK Surface Mount 3 - Single Single 9.65mm 10.29mm 4.83mm 9.65 x 10.29 x 4.83mm - -55 °C - +175 °C
ON Semiconductor NGTB20N120IHRWG, IGBT, 40 A 1200 V, 1MHz, 3-Pin TO-247 ON Semiconductor - 40 A 1200 V ±20V 384 W TO-247 Through Hole 3 1MHz Single Single 16.25mm 5.3mm 21.4mm 16.25 x 5.3 x 21.4mm - -40 °C - +175 °C
ON Semiconductor NGTG15N60S1EG, IGBT, 30 A 600 V, 3-Pin TO-220 ON Semiconductor - 30 A 600 V ±20V 117 W TO-220 Through Hole 3 - Single Single 10.28mm 4.82mm 15.75mm 10.28 x 4.82 x 15.75mm - -55 °C - +150 °C
ON Semiconductor NGTB40N120IHLWG, IGBT, 80 A 1200 V, 3-Pin TO-247 ON Semiconductor - 80 A 1200 V ±20V 260 W TO-247 Through Hole 3 - Single Single 16.26mm 5.3mm 21.08mm 16.26 x 5.3 x 21.08mm - -55 °C - +150 °C
ON Semiconductor NGTG30N60FWG, IGBT, 60 A 600 V, 1MHz, 3-Pin TO-247 ON Semiconductor - 60 A 600 V ±20V 167 W TO-247 Through Hole 3 1MHz Single Single 16.25mm 5.3mm 21.4mm 16.25 x 5.3 x 21.4mm - -55 °C - +150 °C
ON Semiconductor NGD8201ANT4G, IGBT, 50 A 440 V, 3-Pin DPAK ON Semiconductor - 50 A 440 V ±15V 125 W DPAK Surface Mount 3 - Single Single 6.73mm 7.49mm 2.38mm 6.73 x 7.49 x 2.38mm - -55 °C - +175 °C
ON Semiconductor NGTG50N60FWG, IGBT, 100 A 600 V, 1MHz, 3-Pin TO-247 ON Semiconductor - 100 A 600 V ±20V 223 W TO-247 Through Hole 3 1MHz Single Single 16.25mm 5.3mm 21.4mm 16.25 x 5.3 x 21.4mm - -55 °C - +150 °C
ON Semiconductor NGTB50N120FL2WG, IGBT, 100 A 1200 V, 1MHz, 3-Pin TO-247 ON Semiconductor - 100 A 1200 V ±20V 535 W TO-247 Through Hole 3 1MHz Single Single 16.25mm 5.3mm 21.4mm 16.25 x 5.3 x 21.4mm - -55 °C - +175 °C
ON Semiconductor NGTB30N120IHRWG, IGBT, 60 A 1200 V, 1MHz, 3-Pin TO-247 ON Semiconductor - 60 A 1200 V ±20V 384 W TO-247 Through Hole 3 1MHz Single Single 16.25mm 5.3mm 21.4mm 16.25 x 5.3 x 21.4mm - -40 °C - +175 °C
ON Semiconductor NGTB40N120IHRWG, IGBT, 80 A 1200 V, 1MHz, 3-Pin TO-247 ON Semiconductor - 80 A 1200 V ±20V 384 W TO-247 Through Hole 3 1MHz Single Single 16.25mm 5.3mm 21.4mm 16.25 x 5.3 x 21.4mm - -40 °C - +175 °C
ON Semiconductor NGTB40N120LWG, IGBT, 80 A 1200 V, 3-Pin TO-247 ON Semiconductor - 80 A 1200 V ±20V 260 W TO-247 Through Hole 3 - Single Single 16.26mm 5.3mm 21.08mm 16.26 x 5.3 x 21.08mm - -55 °C - +150 °C
ON Semiconductor NGTG20N60L2TF1G, IGBT Transistor Module, 105 (Pulse) A 600 V, 3-Pin TO-3PF ON Semiconductor - 105 (Pulse) A 600 V ±20V 64 W TO-3PF Through Hole 3 - Single Single 15.5mm 5.5mm 26.5mm 15.5 x 5.5 x 26.5mm - - - +150 °C
ON Semiconductor NGTG12N60TF1G, IGBT Transistor Module, 88 (Pulse) A 600 V, 3-Pin TO-3PF ON Semiconductor - 88 (Pulse) A 600 V ±20V 54 W TO-3PF Through Hole 3 - Single Single 15.5mm 5.5mm 26.5mm 15.5 x 5.5 x 26.5mm - - - +150 °C
ON Semiconductor NGTB25N120IHLWG, IGBT, 50 A 1200 V, 3-Pin TO-247 ON Semiconductor - 50 A 1200 V ±20V 192 W TO-247 Through Hole 3 - Single Single 16.26mm 5.3mm 21.08mm 16.26 x 5.3 x 21.08mm - -55 °C - +150 °C
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