MOSFET Transistors

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Part Details Brand Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Typical Turn-Off Delay Time Dimensions Typical Turn-On Delay Time Forward Transconductance Series Height Width Length Forward Diode Voltage Maximum Operating Temperature Minimum Operating Temperature Number of Elements per Chip Transistor Material
ON Semiconductor BSS138LT1G N-channel MOSFET, 200 mA, 50 V, 3-Pin SOT-23 ON Semiconductor N 200 mA 50 V 3.5 Ω 1.5V - ±20 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 225 mW 40 pF@ 25 V - 20 ns 2.9 x 1.3 x 0.94mm 20 ns - - 0.94mm 1.3mm 2.9mm - +150 °C -55 °C 1 Si
ON Semiconductor 2N7002LT1G N-channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23 ON Semiconductor N 115 mA 60 V 7.5 Ω 2.5V - ±20 V SOT-23 Surface Mount 3 Single Enhancement Small Signal 300 mW 50 pF@ 25 V - 40 ns 2.9 x 1.3 x 0.94mm 20 ns - - 0.94mm 1.3mm 2.9mm - +150 °C -55 °C 1 Si
ON Semiconductor NTUD3169CZT5G Dual N/P-channel MOSFET, 250 mA, 280 mA, 20 V, 6-Pin SOT-963 ON Semiconductor N, P 250 mA, 280 mA 20 V 4.5 Ω, 10 Ω 1V - ±8 V SOT-963 Surface Mount 6 Isolated Enhancement Small Signal 200 mW 12.5 pF @ 15 V - 142 ns, 196 ns 1.05 x 0.85 x 0.4mm 16.5 ns, 26 ns - - 0.4mm 0.85mm 1.05mm - +150 °C -55 °C 2 Si
ON Semiconductor 2N7002KT1G N-channel MOSFET, 380 mA, 60 V, 3-Pin SOT-23 ON Semiconductor N 380 mA 60 V 2.5 Ω 2.3V - ±20 V SOT-23 Surface Mount 3 Single Enhancement Small Signal 420 mW 24.5 pF @ 20 V 0.7 nC @ 4.5 V 55.8 ns 3.04 x 1.4 x 1.01mm 12.2 ns - - 1.01mm 1.4mm 3.04mm - +150 °C -55 °C 1 Si
ON Semiconductor NTA4151PT1G P-channel MOSFET, 760 mA, 20 V, 3-Pin SC-75 ON Semiconductor P 760 mA 20 V 1 Ω 1.2V - ±6 V SC-75 Surface Mount 3 Single Enhancement Small Signal 300 mW 156 pF @ -5 V 2.1 nC @ 4.5 V 29 ns 1.65 x 0.9 x 0.8mm 8 ns - - 0.8mm 0.9mm 1.65mm - +150 °C -55 °C 1 Si
ON Semiconductor NTR4501NT1G N-channel MOSFET, 3.2 A, 20 V, 3-Pin SOT-23 ON Semiconductor N 3.2 A 20 V 80 mΩ 1.2V - ±12 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 1.25 W 200 pF@ 10 V 2.4 nC @ 4.5 V 12 ns 2.9 x 1.3 x 0.94mm 6.5 ns - - 0.94mm 1.3mm 2.9mm - +150 °C -55 °C 1 Si
ON Semiconductor NTR4003NT3G N-channel MOSFET, 560 mA, 30 V, 3-Pin SOT-23 ON Semiconductor N 560 mA 30 V 2 Ω 1.4V - ±20 V SOT-23 Surface Mount 3 Single Enhancement Small Signal 830 mW 21 pF @ 5 V 29 nC @ 4.5 V 65.1 ns 3.04 x 1.4 x 1.01mm 16.7 ns - - 1.01mm 1.4mm 3.04mm - +150 °C -55 °C 1 Si
ON Semiconductor BSS138LT3G N-channel MOSFET, 200 mA, 50 V, 3-Pin SOT-23 ON Semiconductor N 200 mA 50 V 3.5 Ω 1.5V - ±20 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 225 mW 40 pF@ 25 V - 20 ns 2.9 x 1.3 x 0.94mm 20 ns - - 0.94mm 1.3mm 2.9mm - +150 °C -55 °C 1 Si
ON Semiconductor NTF5P03T3G P-channel MOSFET, 2.9 A, 30 V, 3+Tab-Pin SOT-223 ON Semiconductor P 2.9 A 30 V 150 mΩ 3V - ±20 V SOT-223 Surface Mount 3+Tab Single Enhancement Power MOSFET 3.13 W 500 pF @ -25 V 15 nC @ 10 V 38 ns 6.7 x 3.7 x 1.65mm 16 ns - - 1.65mm 3.7mm 6.7mm - +150 °C -55 °C 1 Si
ON Semiconductor NTR4502PT1G P-channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 ON Semiconductor P 1.9 A 30 V 350 mΩ 3V - ±20 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 1.25 W 200 pF@ -15 V 6 nC @ 10 V 19 ns 3.04 x 1.4 x 1.01mm 5.2 ns - - 1mm 1.3mm 2.9mm - +150 °C -55 °C 1 Si
ON Semiconductor NTR4171PT1G P-channel MOSFET, 3.5 A, 30 V, 3-Pin SOT-23 ON Semiconductor P 3.5 A 30 V 150 mΩ 1.4V - ±12 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 1.25 W 720 pF@ -15 V 15.6 nC @ 10 V, 7.4 nC @ 4.5 V 25 ns, 32 ns 3.04 x 1.4 x 1.01mm 8 ns, 9 ns - - 1.01mm 1.4mm 3.04mm - +150 °C -55 °C 1 Si
ON Semiconductor NTS4001NT1G N-channel MOSFET, 270 mA, 30 V, 3-Pin SC-70 ON Semiconductor N 270 mA 30 V 2 Ω 1.5V - ±20 V SC-70 Surface Mount 3 Single Enhancement Small Signal 330 mW 20 pF @ 5 V 0.9 nC @ 5 V 94 ns 2.2 x 1.35 x 0.9mm 17 ns - - 0.9mm 1.35mm 2.2mm - +150 °C -55 °C 1 Si
ON Semiconductor NTR5198NLT1G N-channel MOSFET, 2.2 A, 60 V, 3-Pin SOT-23 ON Semiconductor N 2.2 A 60 V 155 mΩ 2.5V - ±20 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 900 mW 182 pF @ 25 V 5.1 nC @ 10 V 13 ns 3.04 x 1.4 x 1.01mm 5 ns - - 1.01mm 1.4mm 3.04mm - +150 °C -55 °C 1 Si
ON Semiconductor NTR1P02T1G P-channel MOSFET, 1 A, 20 V, 3-Pin SOT-23 ON Semiconductor P 1 A 20 V 180 mΩ 2.3V - ±20 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 400 mW 165 pF@ 5 V 2.5 nC @ 5 V 9 ns 2.9 x 1.3 x 0.94mm 7 ns - - 0.94mm 1.3mm 2.9mm - +150 °C -55 °C 1 Si
ON Semiconductor MMBF170LT1G N-channel MOSFET, 500 mA, 60 V, 3-Pin SOT-23 ON Semiconductor N 500 mA 60 V 5 Ω 3V - ±20 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 225 mW 60 pF@ 10 V - 10 ns 2.9 x 1.3 x 0.94mm 10 ns - - 0.94mm 1.3mm 2.9mm - +150 °C -55 °C 1 Si
ON Semiconductor NTD24N06LT4G N-channel MOSFET, 24 A, 60 V, 3-Pin DPAK ON Semiconductor N 24 A 60 V 45 mΩ 2V - ±15 V DPAK Surface Mount 3 Single Enhancement Power MOSFET 62.5 W 814 pF@ 25 V 16 nC @ 5 V 23 ns 6.73 x 6.22 x 2.38mm 9.4 ns - - 2.38mm 6.22mm 6.73mm - +175 °C -55 °C 1 Si
ON Semiconductor NTMD6N02R2G Dual N-channel MOSFET, 6.5 A, 20 V, 8-Pin SOIC ON Semiconductor N 6.5 A 20 V 49 mΩ 1.2V - ±12 V SOIC Surface Mount 8 Isolated Enhancement Power MOSFET 2 W 785 pF @ 16 V 12 nC @ 4.5 V 45 ns 5 x 4 x 1.5mm 12 ns - - 1.5mm 4mm 5mm - +150 °C -55 °C 2 Si
ON Semiconductor ECH8656-TL-H Dual N-channel MOSFET, 7.5 A, 20 V, 8-Pin ECH ON Semiconductor N 7.5 A 20 V 48 mΩ 1.3V - ±10 V ECH Surface Mount 8 Isolated Enhancement Power MOSFET 1.3 W 1060 pF @ 10 V 10.8 nC @ 4.5 V 68 ns 2.9 x 2.3 x 0.9mm 17.5 ns - - 0.9mm 2.3mm 2.9mm - +150 °C - 2 Si
ON Semiconductor BSS84LT1G P-channel MOSFET, 130 mA, 50 V, 3-Pin SOT-23 ON Semiconductor P 130 mA 50 V 10 Ω 2V - ±20 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 225 mW 30 pF@ 5 V - 16 ns 2.9 x 1.3 x 0.94mm 2.5 ns - - 0.94mm 1.3mm 2.9mm - +150 °C -55 °C 1 Si
ON Semiconductor NTP5864NG N-channel MOSFET, 63 A, 60 V, 3-Pin TO-220 ON Semiconductor N 63 A 60 V 12.4 mΩ 4V - ±20 V TO-220 Through Hole 3 Single Enhancement Power MOSFET 107 W 1680 pF @ 25 V 31 nC @ 10 V 18 ns 10.28 x 15.75 x 4.82mm 10 ns - - 4.82mm 15.75mm 10.28mm - +175 °C -55 °C 1 Si
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