MOSFET Transistors

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Part Details Brand Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Number of Elements per Chip Width Forward Diode Voltage Minimum Operating Temperature Transistor Material Maximum Operating Temperature Forward Transconductance Typical Turn-On Delay Time Typical Turn-Off Delay Time Height Length Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Dimensions Series
Vishay SI7309DN-T1-E3 P-channel MOSFET, 3.9 A, 60 V, 8-Pin PowerPAK 1212 Vishay P 3.9 A 60 V 115 mΩ - 1V ±20 V PowerPAK 1212 Surface Mount 8 Single Enhancement Power MOSFET 3.2 W 1 3.05mm - -65 °C Si +150 °C - 10 ns, 25 ns 30 ns, 33 ns 1.04mm 3.05mm 600 pF@ 30 V 14.5 nC @ 10 V 3.05 x 3.05 x 1.04mm -
Vishay SI4599DY-T1-GE3 Dual N/P-channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay N, P 4.7 A, 6.8 A 40 V 42.5 mΩ, 62 mΩ - 1.2V ±20 V SOIC Surface Mount 8 Isolated Enhancement Power MOSFET 3 W, 3.1 W 2 4mm - -55 °C Si +150 °C - 16 (N) ns, 44 (P) ns 16 ns, 28 ns 1.55mm 5mm 640 pF@ 20 V, 970 pF@ -20 V 11.7 nC @ 10 V, 25 nC @ 10 V 5 x 4 x 1.55mm -
Vishay SI1471DH-T1-GE3 P-channel MOSFET, 2.8 A, 30 V, 6-Pin SC-70 Vishay P 2.8 A 30 V 100 mΩ - 0.6V ±12 V SC-70 Surface Mount 6 Single Enhancement Power MOSFET 1.5 W 1 1.25mm - -55 °C Si +150 °C - 4 ns, 22 ns 20 ns, 23 ns 1mm 2mm 445 pF@ 15 V 6.5 nC @ 4.5 V 2 x 1.25 x 1mm -
Vishay SIHP8N50D-GE3 N-channel MOSFET, 8.7 A, 500 V D Series, 3-Pin TO-220AB Vishay N 8.7 A 500 V 850 mΩ - 3V ±30 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 156 W 1 4.65mm - -55 °C Si +150 °C - 13 ns 17 ns 9.01mm 10.51mm 527 pF @ 100 V 15 nC @ 10 V 10.51 x 4.65 x 9.01mm D Series
Vishay IRFL014PBF N-channel MOSFET, 2.7 A, 60 V, 4-Pin SOT-223 Vishay N 2.7 A 60 V 200 mΩ - 2V ±20 V SOT-223 Surface Mount 4 Single Enhancement Power MOSFET 2 W 1 3.7mm - -55 °C Si +150 °C - 10 ns 13 ns 1.45mm 6.7mm 300 pF@ 25 V 11 nC @ 10 V 6.7 x 3.7 x 1.45mm -
SI6966EDQ, Dual N-Channel MOSFET Transistor 4A 20V, 8-Pin TSSOP Vishay - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
Vishay SI4840BDY-T1-GE3 N-channel MOSFET, 10 A, 40 V, 8-Pin SOIC Vishay N 10 A 40 V 9 mΩ - 1V ±20 V SOIC Surface Mount 8 Single Enhancement Power MOSFET 1.56 W 1 4mm - -55 °C Si +150 °C - 15 ns 50 ns 1.55mm 5mm - 18.5 nC @ 5 V 5 x 4 x 1.55mm -
Vishay IRFR9220PBF P-channel MOSFET, 3.6 A, 200 V, 3-Pin DPAK Vishay P 3.6 A 200 V 1.5 Ω - 2V ±20 V DPAK Surface Mount 3 Single Enhancement Power MOSFET 2.5 W 1 6.22mm - -55 °C Si +150 °C - 8.8 ns 7.3 ns 2.39mm 6.73mm 340 pF@ 25 V 20 nC @ 10 V 6.73 x 6.22 x 2.39mm -
Vishay IRFR110PBF N-channel MOSFET, 4.3 A, 100 V, 3-Pin DPAK Vishay N 4.3 A 100 V 540 mΩ - 2V ±20 V DPAK Surface Mount 3 Single Enhancement Power MOSFET 2.5 W 1 6.22mm - -55 °C Si +150 °C - 6.9 ns 15 ns 2.39mm 6.73mm 180 pF@ 25 V 8.3 nC @ 10 V 6.73 x 6.22 x 2.39mm -
Vishay SI4190ADY-T1-GE3 N-channel MOSFET, 18 A, 100 V, 8-Pin SOIC Vishay N 18 A 100 V 2.2 Ω - 1.5V ±20 V SOIC Surface Mount 8 Single Enhancement - 6 W 1 4mm - -55 °C Si +150 °C - 15 ns 34 ns 1.5mm 5mm 1970 pF @ 50 V 44.4 nC @ 10 V 5 x 4 x 1.5mm -
Vishay SI4178DY-T1-GE3 N-channel MOSFET, 12 A, 30 V, 8-Pin SOIC Vishay N 12 A 30 V 33 mΩ - 1.4V ±25 V SOIC Surface Mount 8 Single Enhancement Power MOSFET 5 W 1 4mm - -55 °C Si +150 °C - 20 ns 12 ns 1.55mm 5mm 405 pF @ 15 V 7.5 nC @ 10 V 5 x 4 x 1.55mm -
Vishay SIR462DP-T1-GE3 N-channel MOSFET, 19 A, 30 V, 8-Pin PowerPAK SO Vishay N 19 A 30 V 8 mΩ - 1V ±20 V PowerPAK SO Surface Mount 8 Single Enhancement Power MOSFET 4.8 W 1 5.89mm - -55 °C Si +150 °C - 20 ns 25 ns 1.04mm 4.9mm 1155 pF@ 15 V 20 nC @ 10 V, 8.8 nC @ 4.5 V 4.9 x 5.89 x 1.04mm -
Vishay SI4116DY-T1-GE3 N-channel MOSFET, 12.7 A, 25 V, 8-Pin SOIC Vishay N 12.7 A 25 V 9 mΩ - 0.6V ±12 V SOIC Surface Mount 8 Single Enhancement Power MOSFET 2.5 W 1 4mm - -55 °C Si +150 °C - 13 ns 50 ns 1.55mm 5mm 1925 pF @ 15 V 17.5 nC @ 4.5 V, 37 nC @ 10 V 5 x 4 x 1.55mm -
Vishay IRFD210PBF N-channel MOSFET, 600 mA, 200 V, 4-Pin HVMDIP Vishay N 600 mA 200 V 1.5 Ω - 2V ±20 V HVMDIP Through Hole 4 Single Enhancement Power MOSFET 1 W 1 6.29mm - -55 °C Si +150 °C - 8.2 ns 14 ns 3.37mm 5mm 140 pF @ 25 V 8.2 nC @ 10 V 5 x 6.29 x 3.37mm -
Vishay IRF510PBF N-channel MOSFET, 5.6 A, 100 V, 3-Pin TO-220AB Vishay N 5.6 A 100 V 540 mΩ - 2V ±20 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 43 W 1 4.7mm - -55 °C Si +175 °C - 6.9 ns 15 ns 9.01mm 10.41mm 180 pF@ 25 V 8.3 nC @ 10 V 10.41 x 4.7 x 9.01mm -
Vishay SI2303CDS-T1-GE3 P-channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 Vishay P 1.9 A 30 V 190 mΩ - 1V ±20 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 1 W 1 1.4mm - -55 °C Si +150 °C - 36 ns 12 ns 1.02mm 3.04mm 155 pF@ 15 V 2 nC @ 4.5 V, 4 nC @ 10 V 3.04 x 1.4 x 1.02mm -
Vishay SI2301CDS-T1-GE3 P-channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 Vishay P 2.3 A 20 V 112 mΩ - 0.4V ±8 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 860 mW 1 1.4mm - -55 °C Si +150 °C - 11 ns 30 ns 1.02mm 3.04mm 405 pF @ 10 V 3.3 nC @ 2.5 V, 5.5 nC @ 4.5 V 3.04 x 1.4 x 1.02mm -
Vishay SI9945BDY-T1-GE3 Dual N-channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay N 5.3 A 60 V 72 mΩ - 1V ±20 V SOIC Surface Mount 8 Isolated Enhancement - 3.1 W 2 4mm - -55 °C Si +150 °C - 15 ns 20 ns 1.5mm 5mm 665 pF @ 15 V 13 nC @ 10 V 5 x 4 x 1.5mm -
Vishay SI4948BEY-T1-GE3 Dual P-channel MOSFET, 3.1 A, 60 V, 8-Pin SOIC Vishay P 3.1 A 60 V 150 mΩ - 1V ±20 V SOIC Surface Mount 8 Isolated Enhancement - 2.4 W 2 4mm - -55 °C Si +175 °C - 10 ns 50 ns 1.5mm 5mm - 14.5 nC @ 10 V 5 x 4 x 1.5mm -
Vishay SI2318CDS-T1-GE3 N-channel MOSFET, 5.6 A, 40 V, 3-Pin SOT-23 Vishay N 5.6 A 40 V 51 mΩ - 1.2V ±20 V SOT-23 Surface Mount 3 Single Enhancement - 2.1 W 1 1.4mm - -55 °C Si +150 °C - 12 ns 14 ns 1.02mm 3.04mm 340 pF@ 20 V 5.8 nC @ 10 V 3.04 x 1.4 x 1.02mm -
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