MOSFET Transistors

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Part Details Brand Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Typical Turn-Off Delay Time Dimensions Typical Turn-On Delay Time Forward Transconductance Series Height Width Length Forward Diode Voltage Maximum Operating Temperature Minimum Operating Temperature Number of Elements per Chip Transistor Material
Vishay SI4599DY-T1-GE3 Dual N/P-channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay N, P 4.7 A, 6.8 A 40 V 42.5 mΩ, 62 mΩ - 1.2V ±20 V SOIC Surface Mount 8 Isolated Enhancement Power MOSFET 3 W, 3.1 W 640 pF@ 20 V, 970 pF@ -20 V 11.7 nC @ 10 V, 25 nC @ 10 V 16 ns, 28 ns 5 x 4 x 1.55mm 16 (N) ns, 44 (P) ns - - 1.55mm 4mm 5mm - +150 °C -55 °C 2 Si
Vishay SIHP8N50D-GE3 N-channel MOSFET, 8.7 A, 500 V D Series, 3-Pin TO-220AB Vishay N 8.7 A 500 V 850 mΩ - 3V ±30 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 156 W 527 pF @ 100 V 15 nC @ 10 V 17 ns 10.51 x 4.65 x 9.01mm 13 ns - D Series 9.01mm 4.65mm 10.51mm - +150 °C -55 °C 1 Si
SI6966EDQ, Dual N-Channel MOSFET Transistor 4A 20V, 8-Pin TSSOP Vishay - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
Vishay IRFL014PBF N-channel MOSFET, 2.7 A, 60 V, 4-Pin SOT-223 Vishay N 2.7 A 60 V 200 mΩ - 2V ±20 V SOT-223 Surface Mount 4 Single Enhancement Power MOSFET 2 W 300 pF@ 25 V 11 nC @ 10 V 13 ns 6.7 x 3.7 x 1.45mm 10 ns - - 1.45mm 3.7mm 6.7mm - +150 °C -55 °C 1 Si
Vishay IRFR9220PBF P-channel MOSFET, 3.6 A, 200 V, 3-Pin DPAK Vishay P 3.6 A 200 V 1.5 Ω - 2V ±20 V DPAK Surface Mount 3 Single Enhancement Power MOSFET 2.5 W 340 pF@ 25 V 20 nC @ 10 V 7.3 ns 6.73 x 6.22 x 2.39mm 8.8 ns - - 2.39mm 6.22mm 6.73mm - +150 °C -55 °C 1 Si
Vishay IRFR110PBF N-channel MOSFET, 4.3 A, 100 V, 3-Pin DPAK Vishay N 4.3 A 100 V 540 mΩ - 2V ±20 V DPAK Surface Mount 3 Single Enhancement Power MOSFET 2.5 W 180 pF@ 25 V 8.3 nC @ 10 V 15 ns 6.73 x 6.22 x 2.39mm 6.9 ns - - 2.39mm 6.22mm 6.73mm - +150 °C -55 °C 1 Si
Vishay SI2365EDS-T1-GE3 P-channel MOSFET, 4.7 A, 20 V, 3-Pin TO-236 Vishay P 4.7 A 20 V 67.5 mΩ - 0.4V ±8 V TO-236 Surface Mount 3 Single Enhancement Power MOSFET 1.7 W - 23.8 nC @ 8 V 65 ns 3.04 x 1.4 x 1.02mm 22 ns - - 1.02mm 1.4mm 3.04mm - +150 °C -50 °C 1 Si
Vishay IRF840APBF N-channel MOSFET, 8 A, 500 V, 3-Pin TO-220AB Vishay N 8 A 500 V 850 mΩ - 2V ±30 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 125 W 1018 pF@ 25 V 38 nC @ 10 V 26 ns 10.41 x 4.7 x 9.01mm 11 ns - - 9.01mm 4.7mm 10.41mm - +150 °C -55 °C 1 Si
Vishay SI4190ADY-T1-GE3 N-channel MOSFET, 18 A, 100 V, 8-Pin SOIC Vishay N 18 A 100 V 2.2 Ω - 1.5V ±20 V SOIC Surface Mount 8 Single Enhancement - 6 W 1970 pF @ 50 V 44.4 nC @ 10 V 34 ns 5 x 4 x 1.5mm 15 ns - - 1.5mm 4mm 5mm - +150 °C -55 °C 1 Si
Vishay SIR462DP-T1-GE3 N-channel MOSFET, 19 A, 30 V, 8-Pin PowerPAK SO Vishay N 19 A 30 V 8 mΩ - 1V ±20 V PowerPAK SO Surface Mount 8 Single Enhancement Power MOSFET 4.8 W 1155 pF@ 15 V 20 nC @ 10 V, 8.8 nC @ 4.5 V 25 ns 4.9 x 5.89 x 1.04mm 20 ns - - 1.04mm 5.89mm 4.9mm - +150 °C -55 °C 1 Si
Vishay SI4116DY-T1-GE3 N-channel MOSFET, 12.7 A, 25 V, 8-Pin SOIC Vishay N 12.7 A 25 V 9 mΩ - 0.6V ±12 V SOIC Surface Mount 8 Single Enhancement Power MOSFET 2.5 W 1925 pF @ 15 V 17.5 nC @ 4.5 V, 37 nC @ 10 V 50 ns 5 x 4 x 1.55mm 13 ns - - 1.55mm 4mm 5mm - +150 °C -55 °C 1 Si
Vishay SI4178DY-T1-GE3 N-channel MOSFET, 12 A, 30 V, 8-Pin SOIC Vishay N 12 A 30 V 33 mΩ - 1.4V ±25 V SOIC Surface Mount 8 Single Enhancement Power MOSFET 5 W 405 pF @ 15 V 7.5 nC @ 10 V 12 ns 5 x 4 x 1.55mm 20 ns - - 1.55mm 4mm 5mm - +150 °C -55 °C 1 Si
Vishay SI4840BDY-T1-GE3 N-channel MOSFET, 10 A, 40 V, 8-Pin SOIC Vishay N 10 A 40 V 9 mΩ - 1V ±20 V SOIC Surface Mount 8 Single Enhancement Power MOSFET 1.56 W - 18.5 nC @ 5 V 50 ns 5 x 4 x 1.55mm 15 ns - - 1.55mm 4mm 5mm - +150 °C -55 °C 1 Si
Vishay SI1553CDL-T1-GE3 Dual N/P-channel MOSFET, 400 mA, 700 mA, 20 V, 6-Pin SOT-363 Vishay N, P 400 mA, 700 mA 20 V 1.48 Ω, 578 mΩ - 0.6V ±12 V SOT-363 Surface Mount 6 Isolated Enhancement Power MOSFET 340 mW 38 pF@ 10 V, 43 pF@ -10 V 1.2 nC @ 10 V, 1.9 nC @ 10 V 12 ns, 22 ns 2.2 x 1.35 x 1mm 15 (P) ns, 16 (N) ns - - 1mm 1.35mm 2.2mm - +150 °C -55 °C 2 Si
Vishay SI4532CDY-T1-GE3 Dual N/P-channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC Vishay N, P 4.3 A, 6 A 30 V 65 mΩ, 140 mΩ - 1V ±20 V SOIC Surface Mount 8 Isolated Enhancement - 2.78 W 305 pF@ 15 V, 340 pF@ -15 V 6 nC @ 10 V, 7.8 nC @ 10 V 14 ns, 20 ns 5 x 4 x 1.5mm 16 (N) ns, 40 (P) ns - - 1.5mm 4mm 5mm - +150 °C -55 °C 2 Si
Vishay SI2303CDS-T1-GE3 P-channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 Vishay P 1.9 A 30 V 190 mΩ - 1V ±20 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 1 W 155 pF@ 15 V 2 nC @ 4.5 V, 4 nC @ 10 V 12 ns 3.04 x 1.4 x 1.02mm 36 ns - - 1.02mm 1.4mm 3.04mm - +150 °C -55 °C 1 Si
Vishay SI4948BEY-T1-GE3 Dual P-channel MOSFET, 3.1 A, 60 V, 8-Pin SOIC Vishay P 3.1 A 60 V 150 mΩ - 1V ±20 V SOIC Surface Mount 8 Isolated Enhancement - 2.4 W - 14.5 nC @ 10 V 50 ns 5 x 4 x 1.5mm 10 ns - - 1.5mm 4mm 5mm - +175 °C -55 °C 2 Si
Vishay IRF740PBF N-channel MOSFET, 10 A, 400 V, 3-Pin TO-220AB Vishay N 10 A 400 V 550 mΩ - 2V ±20 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 125 W 1400 pF@ 25 V 63 nC @ 10 V 50 ns 10.41 x 4.7 x 9.01mm 14 ns - - 9.01mm 4.7mm 10.41mm - +150 °C -55 °C 1 Si
Vishay Si4134DY-T1-GE3 N-channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Vishay N 9.9 A 30 V 14 mΩ - 1.2V ±20 V SOIC Surface Mount 8 Single Enhancement Power MOSFET 2.5 W 846 pF @ 15 V 15.4 nC @ 10 V, 7.3 nC @ 4.5 V 13 ns, 14 ns 5 x 4 x 1.5mm 9 ns, 15 ns - - 1.5mm 4mm 5mm - +150 °C -55 °C 1 Si
Vishay IRFD210PBF N-channel MOSFET, 600 mA, 200 V, 4-Pin HVMDIP Vishay N 600 mA 200 V 1.5 Ω - 2V ±20 V HVMDIP Through Hole 4 Single Enhancement Power MOSFET 1 W 140 pF @ 25 V 8.2 nC @ 10 V 14 ns 5 x 6.29 x 3.37mm 8.2 ns - - 3.37mm 6.29mm 5mm - +150 °C -55 °C 1 Si
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