MOSFET Transistors

You are viewing 1 - 20 of 712 results
Display:
Results per page
20
  • 20
  • 50
  • 100
Price
(Price shown excludes VAT)
Part Details Brand Channel Type Recently Introduced Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Typical Turn-Off Delay Time Dimensions Typical Turn-On Delay Time Forward Transconductance Series Height Width Length Forward Diode Voltage Maximum Operating Temperature Number of Elements per Chip Minimum Operating Temperature Transistor Material
Vishay SI4599DY-T1-GE3 Dual N/P-channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay N, P - 4.7 A, 6.8 A 40 V 42.5 mΩ, 62 mΩ - 1.2V -20 V, +20 V SOIC Surface Mount 8 Isolated Enhancement Power MOSFET 3 W, 3.1 W 640 pF@ 20 V, 970 pF@ -20 V 11.7 nC @ 10 V, 25 nC @ 10 V 16 ns, 28 ns 5 x 4 x 1.55mm 16 ns, 44 ns - - 1.55mm 4mm 5mm - +150 °C 2 -55 °C Si
Vishay SIHP8N50D-GE3 N-channel MOSFET, 8.7 A, 500 V D Series, 3-Pin TO-220AB Vishay N - 8.7 A 500 V 850 mΩ - 3V -30 V, +30 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 156 W 527 pF @ 100 V 15 nC @ 10 V 17 ns 10.51 x 4.65 x 9.01mm 13 ns - D Series 9.01mm 4.65mm 10.51mm - +150 °C 1 -55 °C Si
SI6966EDQ, Dual N-Channel MOSFET Transistor 4A 20V, 8-Pin TSSOP Vishay - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
Vishay IRF740PBF N-channel MOSFET, 10 A, 400 V, 3-Pin TO-220AB Vishay N - 10 A 400 V 550 mΩ - 2V -20 V, +20 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 125 W 1400 pF@ 25 V 63 nC @ 10 V 50 ns 10.41 x 4.7 x 9.01mm 14 ns - - 9.01mm 4.7mm 10.41mm - +150 °C 1 -55 °C Si
Vishay IRFL014PBF N-channel MOSFET, 2.7 A, 60 V, 3+Tab-Pin SOT-223 Vishay N - 2.7 A 60 V 200 mΩ - 2V -20 V, +20 V SOT-223 Surface Mount 3+Tab Single Enhancement Power MOSFET 2 W 300 pF@ 25 V 11 nC @ 10 V 13 ns 6.7 x 3.7 x 1.45mm 10 ns - - 1.45mm 3.7mm 6.7mm - +150 °C 1 -55 °C Si
Vishay IRFR9220PBF P-channel MOSFET, 3.6 A, 200 V, 3-Pin DPAK Vishay P - 3.6 A 200 V 1.5 Ω - 2V -20 V, +20 V DPAK (TO-252) Surface Mount 3 Single Enhancement Power MOSFET 2.5 W 340 pF@ 25 V 20 nC @ 10 V 7.3 ns 6.73 x 6.22 x 2.39mm 8.8 ns - - 2.39mm 6.22mm 6.73mm - +150 °C 1 -55 °C Si
Vishay IRF840APBF N-channel MOSFET, 8 A, 500 V, 3-Pin TO-220AB Vishay N - 8 A 500 V 850 mΩ - 2V -30 V, +30 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 125 W 1018 pF@ 25 V 38 nC @ 10 V 26 ns 10.41 x 4.7 x 9.01mm 11 ns - - 9.01mm 4.7mm 10.41mm - +150 °C 1 -55 °C Si
Vishay IRFP460BPBF N-channel MOSFET, 20 A, 500 V D Series, 3-Pin TO-247AC Vishay N - 20 A 500 V 250 mΩ - 2V -20 V, +20 V TO-247AC Through Hole 3 Single Enhancement Power MOSFET 278 W 3094 pF@ 10 V 85 nC @ 10 V 117 ns 15.87 x 5.31 x 20.82mm 24 ns - D Series 20.82mm 5.31mm 15.87mm - +150 °C 1 -55 °C Si
Vishay SI2365EDS-T1-GE3 P-channel MOSFET, 4.7 A, 20 V, 3-Pin SOT-23 Vishay P - 4.7 A 20 V 67.5 mΩ - 0.4V -8 V, +8 V SOT-23 (TO-236) Surface Mount 3 Single Enhancement Power MOSFET 1.7 W - 23.8 nC @ 8 V 65 ns 3.04 x 1.4 x 1.02mm 22 ns - - 1.02mm 1.4mm 3.04mm - +150 °C 1 -50 °C Si
Vishay IRFR110PBF N-channel MOSFET, 4.3 A, 100 V, 3-Pin DPAK Vishay N - 4.3 A 100 V 540 mΩ - 2V -20 V, +20 V DPAK (TO-252) Surface Mount 3 Single Enhancement Power MOSFET 2.5 W 180 pF@ 25 V 8.3 nC @ 10 V 15 ns 6.73 x 6.22 x 2.39mm 6.9 ns - - 2.39mm 6.22mm 6.73mm - +150 °C 1 -55 °C Si
Vishay IRF9520PBF P-channel MOSFET, 6.8 A, 100 V, 3-Pin TO-220AB Vishay P - 6.8 A 100 V 600 mΩ - 2V -20 V, +20 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 60 W 390 pF@ 25 V 18 nC @ 10 V 21 ns 10.41 x 4.7 x 9.01mm 9.6 ns - - 9.01mm 4.7mm 10.41mm - +175 °C 1 -55 °C Si
Vishay SIR462DP-T1-GE3 N-channel MOSFET, 19 A, 30 V, 8-Pin PowerPAK SO Vishay N - 19 A 30 V 8 mΩ - 1V -20 V, +20 V PowerPAK SO Surface Mount 8 Single Enhancement Power MOSFET 4.8 W 1155 pF@ 15 V 20 nC @ 10 V, 8.8 nC @ 4.5 V 25 ns 4.9 x 5.89 x 1.04mm 20 ns - - 1.04mm 5.89mm 4.9mm - +150 °C 1 -55 °C Si
Vishay IRF510PBF N-channel MOSFET, 5.6 A, 100 V, 3-Pin TO-220AB Vishay N - 5.6 A 100 V 540 mΩ - 2V -20 V, +20 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 43 W 180 pF@ 25 V 8.3 nC @ 10 V 15 ns 10.41 x 4.7 x 9.01mm 6.9 ns - - 9.01mm 4.7mm 10.41mm - +175 °C 1 -55 °C Si
Vishay SI4116DY-T1-GE3 N-channel MOSFET, 12.7 A, 25 V, 8-Pin SOIC Vishay N - 12.7 A 25 V 9 mΩ - 0.6V -12 V, +12 V SOIC Surface Mount 8 Single Enhancement Power MOSFET 2.5 W 1925 pF @ 15 V 17.5 nC @ 4.5 V, 37 nC @ 10 V 50 ns 5 x 4 x 1.55mm 13 ns - - 1.55mm 4mm 5mm - +150 °C 1 -55 °C Si
Vishay SI4190ADY-T1-GE3 N-channel MOSFET, 18 A, 100 V, 8-Pin SOIC Vishay N - 18 A 100 V 2.2 Ω - 1.5V -20 V, +20 V SOIC Surface Mount 8 Single Enhancement - 6 W 1970 pF @ 50 V 44.4 nC @ 10 V 34 ns 5 x 4 x 1.5mm 15 ns - - 1.5mm 4mm 5mm - +150 °C 1 -55 °C Si
Vishay SI4178DY-T1-GE3 N-channel MOSFET, 12 A, 30 V, 8-Pin SOIC Vishay N - 12 A 30 V 33 mΩ - 1.4V -25 V, +25 V SOIC Surface Mount 8 Single Enhancement Power MOSFET 5 W 405 pF @ 15 V 7.5 nC @ 10 V 12 ns 5 x 4 x 1.55mm 20 ns - - 1.55mm 4mm 5mm - +150 °C 1 -55 °C Si
Vishay IRFP450APBF N-channel MOSFET, 14 A, 500 V, 3-Pin TO-247AC Vishay N - 14 A 500 V 400 mΩ - 2V -30 V, +30 V TO-247AC Through Hole 3 Single Enhancement Power MOSFET 190 W 2038 pF@ 25 V 64 nC @ 10 V 35 ns 15.87 x 5.31 x 20.7mm 15 ns - - 20.7mm 5.31mm 15.87mm - +150 °C 1 -55 °C Si
Vishay SI2309CDS-T1-GE3 P-channel MOSFET, 1.2 A, 60 V, 3-Pin SOT-23 Vishay P - 1.2 A 60 V 345 mΩ - 1V -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 1 W 210 pF @ 30 V 2.7 nC @ 4.5 V 15 ns 3.04 x 1.4 x 1.02mm 40 ns - - 1.02mm 1.4mm 3.04mm - +150 °C 1 -55 °C Si
Vishay IRFD9120PBF P-channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP Vishay P - 1 A 100 V 600 mΩ - 2V -20 V, +20 V HVMDIP Through Hole 4 Single Enhancement Power MOSFET 1.3 W 390 pF @ 25 V 18 nC @ 10 V 21 ns 5 x 6.29 x 3.37mm 9.6 ns - - 3.37mm 6.29mm 5mm - +175 °C 1 -55 °C Si
Vishay IRF9530PBF P-channel MOSFET, 12 A, 100 V, 3-Pin TO-220AB Vishay P - 12 A 100 V 300 mΩ - 2V -20 V, +20 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 88 W 860 pF@ 25 V 38 nC @ 10 V 31 ns 10.41 x 4.7 x 9.01mm 12 ns - - 9.01mm 4.7mm 10.41mm - +175 °C 1 -55 °C Si
Check Our Stock Volumes
Enter the quantity you require and click 'Check'. Stock information was updated at
. This information is updated daily so availability may vary at time of order placement.
RS Stock No:
I'm Looking For 
Compare list full
You can only compare 8 products at a time

View or remove your products on your Compare page
You are viewing 1 - 20 of 712 results