MOSFET Transistors

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Part Details Brand Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Forward Transconductance Transistor Material Width Series Height Typical Turn-On Delay Time Typical Turn-Off Delay Time Dimensions Maximum Operating Temperature Forward Diode Voltage Typical Gate Charge @ Vgs Typical Input Capacitance @ Vds Number of Elements per Chip Minimum Operating Temperature Length
Vishay SI4599DY-T1-GE3 Dual N/P-channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay N, P 4.7 A, 6.8 A 40 V 42.5 mΩ, 62 mΩ - 1.2V ±20 V SOIC Surface Mount 8 Isolated Enhancement Power MOSFET 3 W, 3.1 W - Si 4mm - 1.55mm 16 (N) ns, 44 (P) ns 16 ns, 28 ns 5 x 4 x 1.55mm +150 °C - 11.7 nC @ 10 V, 25 nC @ 10 V 640 pF@ 20 V, 970 pF@ -20 V 2 -55 °C 5mm
Vishay SI7309DN-T1-E3 P-channel MOSFET, 3.9 A, 60 V, 8-Pin PowerPAK 1212 Vishay P 3.9 A 60 V 115 mΩ - 1V ±20 V PowerPAK 1212 Surface Mount 8 Single Enhancement Power MOSFET 3.2 W - Si 3.05mm - 1.04mm 10 ns, 25 ns 30 ns, 33 ns 3.05 x 3.05 x 1.04mm +150 °C - 14.5 nC @ 10 V 600 pF@ 30 V 1 -65 °C 3.05mm
Vishay IRFD210PBF N-channel MOSFET, 600 mA, 200 V, 4-Pin HVMDIP Vishay N 600 mA 200 V 1.5 Ω - 2V ±20 V HVMDIP Through Hole 4 Single Enhancement Power MOSFET 1 W - Si 6.29mm - 3.37mm 8.2 ns 14 ns 5 x 6.29 x 3.37mm +150 °C - 8.2 nC @ 10 V 140 pF @ 25 V 1 -55 °C 5mm
Vishay SI4840BDY-T1-GE3 N-channel MOSFET, 10 A, 40 V, 8-Pin SOIC Vishay N 10 A 40 V 9 mΩ - 1V ±20 V SOIC Surface Mount 8 Single Enhancement Power MOSFET 1.56 W - Si 4mm - 1.55mm 15 ns 50 ns 5 x 4 x 1.55mm +150 °C - 18.5 nC @ 5 V - 1 -55 °C 5mm
Vishay SI1471DH-T1-GE3 P-channel MOSFET, 2.8 A, 30 V, 6-Pin SC-70 Vishay P 2.8 A 30 V 100 mΩ - 0.6V ±12 V SC-70 Surface Mount 6 Single Enhancement Power MOSFET 1.5 W - Si 1.25mm - 1mm 4 ns, 22 ns 20 ns, 23 ns 2 x 1.25 x 1mm +150 °C - 6.5 nC @ 4.5 V 445 pF@ 15 V 1 -55 °C 2mm
Vishay IRFL014PBF N-channel MOSFET, 2.7 A, 60 V, 4-Pin SOT-223 Vishay N 2.7 A 60 V 200 mΩ - 2V ±20 V SOT-223 Surface Mount 4 Single Enhancement Power MOSFET 2 W - Si 3.7mm - 1.45mm 10 ns 13 ns 6.7 x 3.7 x 1.45mm +150 °C - 11 nC @ 10 V 300 pF@ 25 V 1 -55 °C 6.7mm
SI6966EDQ, Dual N-Channel MOSFET Transistor 4A 20V, 8-Pin TSSOP Vishay - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
Vishay IRFR9220PBF P-channel MOSFET, 3.6 A, 200 V, 3-Pin DPAK Vishay P 3.6 A 200 V 1.5 Ω - 2V ±20 V DPAK Surface Mount 3 Single Enhancement Power MOSFET 2.5 W - Si 6.22mm - 2.39mm 8.8 ns 7.3 ns 6.73 x 6.22 x 2.39mm +150 °C - 20 nC @ 10 V 340 pF@ 25 V 1 -55 °C 6.73mm
Vishay IRFP460BPBF N-channel MOSFET, 20 A, 500 V, 3-Pin TO-247AC Vishay N 20 A 500 V 250 mΩ - 2V ±20 V TO-247AC Through Hole 3 Single Enhancement Power MOSFET 278 W - Si 5.31mm D Series 20.82mm 24 ns 117 ns 15.87 x 5.31 x 20.82mm +150 °C - 85 nC @ 10 V 3094 pF@ 10 V 1 -55 °C 15.87mm
Vishay SI4190ADY-T1-GE3 N-channel MOSFET, 18 A, 100 V, 8-Pin SOIC Vishay N 18 A 100 V 2.2 Ω - 1.5V ±20 V SOIC Surface Mount 8 Single Enhancement - 6 W - Si 4mm - 1.5mm 15 ns 34 ns 5 x 4 x 1.5mm +150 °C - 44.4 nC @ 10 V 1970 pF @ 50 V 1 -55 °C 5mm
Vishay IRF510PBF N-channel MOSFET, 5.6 A, 100 V, 3-Pin TO-220AB Vishay N 5.6 A 100 V 540 mΩ - 2V ±20 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 43 W - Si 4.7mm - 9.01mm 6.9 ns 15 ns 10.41 x 4.7 x 9.01mm +175 °C - 8.3 nC @ 10 V 180 pF@ 25 V 1 -55 °C 10.41mm
Vishay IRFR110PBF N-channel MOSFET, 4.3 A, 100 V, 3-Pin DPAK Vishay N 4.3 A 100 V 540 mΩ - 2V ±20 V DPAK Surface Mount 3 Single Enhancement Power MOSFET 2.5 W - Si 6.22mm - 2.39mm 6.9 ns 15 ns 6.73 x 6.22 x 2.39mm +150 °C - 8.3 nC @ 10 V 180 pF@ 25 V 1 -55 °C 6.73mm
Vishay IRFD110 N-channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP Vishay N 1 A 100 V 540 mΩ - 2V ±20 V HVMDIP Through Hole 4 Single Enhancement Power MOSFET 1.3 W - Si 6.29mm - 3.37mm 6.9 ns 15 ns 5 x 6.29 x 3.37mm +175 °C - 8.3 nC @ 10 V 180 pF @ 25 V 1 -55 °C 5mm
Vishay IRFU9310PBF P-channel MOSFET, 1.8 A, 400 V, 3-Pin IPAK Vishay P 1.8 A 400 V 7 Ω - 2V ±20 V IPAK Through Hole 3 Single Enhancement Power MOSFET 50 W - Si 2.38mm - 6.22mm 11 ns 25 ns 6.73 x 2.38 x 6.22mm +150 °C - 13 nC @ 10 V 270 pF@ 25 V 1 -55 °C 6.73mm
Vishay SIR462DP-T1-GE3 N-channel MOSFET, 19 A, 30 V, 8-Pin PowerPAK SO Vishay N 19 A 30 V 8 mΩ - 1V ±20 V PowerPAK SO Surface Mount 8 Single Enhancement Power MOSFET 4.8 W - Si 5.89mm - 1.04mm 20 ns 25 ns 4.9 x 5.89 x 1.04mm +150 °C - 20 nC @ 10 V, 8.8 nC @ 4.5 V 1155 pF@ 15 V 1 -55 °C 4.9mm
Vishay SI2301CDS-T1-GE3 P-channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 Vishay P 2.3 A 20 V 112 mΩ - 0.4V ±8 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 0.86 W - Si 1.4mm - 1.02mm 11 ns 30 ns 3.04 x 1.4 x 1.02mm +150 °C - 3.3 nC @ 2.5 V, 5.5 nC @ 4.5 V 405 pF @ 10 V 1 -55 °C 3.04mm
Vishay IRFD9120PBF P-channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP Vishay P 1 A 100 V 600 mΩ - 2V ±20 V HVMDIP Through Hole 4 Single Enhancement Power MOSFET 1.3 W - Si 6.29mm - 3.37mm 9.6 ns 21 ns 5 x 6.29 x 3.37mm +175 °C - 18 nC @ 10 V 390 pF @ 25 V 1 -55 °C 5mm
Vishay SI2309CDS-T1-GE3 P-channel MOSFET, 1.2 A, 60 V, 3-Pin SOT-23 Vishay P 1.2 A 60 V 345 mΩ - 1V ±20 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 1 W - Si 1.4mm - 1.02mm 40 ns 15 ns 3.04 x 1.4 x 1.02mm +150 °C - 2.7 nC @ 4.5 V 210 pF @ 30 V 1 -55 °C 3.04mm
Vishay SI4431CDY-T1-GE3 P-channel MOSFET, 7.2 A, 30 V, 8-Pin SOIC Vishay P 7.2 A 30 V 49 mΩ - 1V ±20 V SOIC Surface Mount 8 Single Enhancement Power MOSFET 4.2 W - Si 4mm - 1.55mm 38 ns 23 ns 5 x 4 x 1.55mm +150 °C - 25 nC @ 10 V 1006 pF @ -15 V 1 -55 °C 5mm
Vishay IRF540 N-channel MOSFET, 28 A, 100 V, 3-Pin TO-220AB Vishay N 28 A 100 V 77 mΩ - 2V ±20 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 150 W - Si 4.7mm - 9.01mm 11 ns 53 ns 10.41 x 4.7 x 9.01mm +175 °C - 72 nC @ 10 V 1700 pF@ 25 V 1 -55 °C 10.41mm
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