Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
630 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
900 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Typical Gate Charge @ Vgs
0.9 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Height
1.1mm
Minimum Operating Temperature
-65 °C
Product details
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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Please check again later.
AED 1.00
Each (Supplied on a Reel) (ex VAT)
AED 1.05
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
25
AED 1.00
Each (Supplied on a Reel) (ex VAT)
AED 1.05
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
25
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
25 - 125 | AED 1.00 | AED 25.00 |
150+ | AED 0.40 | AED 10.00 |
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
630 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
900 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Typical Gate Charge @ Vgs
0.9 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Height
1.1mm
Minimum Operating Temperature
-65 °C
Product details