N-Channel MOSFET, 17 A, 650 V, 4-Pin Power88 onsemi FCMT180N65S3

RS Stock No.: 178-4655Brand: onsemiManufacturers Part No.: FCMT180N65S3
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

650 V

Package Type

Power88

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

139 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Maximum Operating Temperature

+150 °C

Length

8mm

Typical Gate Charge @ Vgs

33 nC @ 10 V

Width

8mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

1.05mm

Minimum Operating Temperature

-55 °C

Country of Origin

Philippines

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N-Channel MOSFET, 17 A, 650 V, 4-Pin Power88 onsemi FCMT180N65S3
AED 12.548Each (On a Reel of 3000) (ex VAT)

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AED 13.25

Each (In a Pack of 10) (ex VAT)

AED 13.912

Each (In a Pack of 10) (inc. VAT)

N-Channel MOSFET, 17 A, 650 V, 4-Pin Power88 onsemi FCMT180N65S3
Select packaging type

AED 13.25

Each (In a Pack of 10) (ex VAT)

AED 13.912

Each (In a Pack of 10) (inc. VAT)

N-Channel MOSFET, 17 A, 650 V, 4-Pin Power88 onsemi FCMT180N65S3
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
10 - 90AED 13.25AED 132.50
100 - 240AED 10.50AED 105.00
250 - 490AED 10.20AED 102.00
500 - 990AED 9.95AED 99.50
1000+AED 9.75AED 97.50

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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You may be interested in
N-Channel MOSFET, 17 A, 650 V, 4-Pin Power88 onsemi FCMT180N65S3
AED 12.548Each (On a Reel of 3000) (ex VAT)

Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

650 V

Package Type

Power88

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

139 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Maximum Operating Temperature

+150 °C

Length

8mm

Typical Gate Charge @ Vgs

33 nC @ 10 V

Width

8mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

1.05mm

Minimum Operating Temperature

-55 °C

Country of Origin

Philippines

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
N-Channel MOSFET, 17 A, 650 V, 4-Pin Power88 onsemi FCMT180N65S3
AED 12.548Each (On a Reel of 3000) (ex VAT)