onsemi FGH40N60SFDTU IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole
Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
290 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.6 x 4.7 x 20.6mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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AED 18.10
Each (In a Tube of 30) (ex VAT)
AED 19.005
Each (In a Tube of 30) (inc. VAT)
30
AED 18.10
Each (In a Tube of 30) (ex VAT)
AED 19.005
Each (In a Tube of 30) (inc. VAT)
30
Buy in bulk
| quantity | Unit price | Per Tube |
|---|---|---|
| 30 - 30 | AED 18.10 | AED 543.00 |
| 60 - 120 | AED 17.55 | AED 526.50 |
| 150 - 270 | AED 17.10 | AED 513.00 |
| 300+ | AED 16.60 | AED 498.00 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
290 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.6 x 4.7 x 20.6mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products