Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
70 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.87 x 4.82 x 20.82mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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AED 16.30
Each (In a Tube of 30) (ex VAT)
AED 17.115
Each (In a Tube of 30) (inc VAT)
30
AED 16.30
Each (In a Tube of 30) (ex VAT)
AED 17.115
Each (In a Tube of 30) (inc VAT)
30
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
30 - 30 | AED 16.30 | AED 489.00 |
60 - 120 | AED 15.80 | AED 474.00 |
150 - 270 | AED 15.30 | AED 459.00 |
300+ | AED 14.65 | AED 439.50 |
Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
70 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.87 x 4.82 x 20.82mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.