Technical Document
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
0.3 to 1.5mA
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.92 x 1.3 x 0.93mm
Maximum Operating Temperature
+150 °C
Length
2.92mm
Height
0.93mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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AED 1.25
Each (In a Pack of 25) (ex VAT)
AED 1.312
Each (In a Pack of 25) (inc. VAT)
Standard
25
AED 1.25
Each (In a Pack of 25) (ex VAT)
AED 1.312
Each (In a Pack of 25) (inc. VAT)
Standard
25
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
25 - 75 | AED 1.25 | AED 31.25 |
100 - 225 | AED 1.05 | AED 26.25 |
250 - 475 | AED 0.95 | AED 23.75 |
500 - 975 | AED 0.85 | AED 21.25 |
1000+ | AED 0.80 | AED 20.00 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
0.3 to 1.5mA
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.92 x 1.3 x 0.93mm
Maximum Operating Temperature
+150 °C
Length
2.92mm
Height
0.93mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.