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SiC N-Channel MOSFET, 68 A, 1200 V, 4-Pin TO-247-4L onsemi NTH4L022N120M3S

RS Stock No.: 233-6854Brand: onsemiManufacturers Part No.: NTH4L022N120M3S
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

68 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247-4L

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.03 Ω

Maximum Gate Threshold Voltage

4.4V

Number of Elements per Chip

1

Transistor Material

SiC

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AED 56.20

AED 56.20 Each (ex VAT)

AED 59.01

AED 59.01 Each (inc. VAT)

SiC N-Channel MOSFET, 68 A, 1200 V, 4-Pin TO-247-4L onsemi NTH4L022N120M3S
Select packaging type

AED 56.20

AED 56.20 Each (ex VAT)

AED 59.01

AED 59.01 Each (inc. VAT)

SiC N-Channel MOSFET, 68 A, 1200 V, 4-Pin TO-247-4L onsemi NTH4L022N120M3S
Stock information temporarily unavailable.
Select packaging type

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

68 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247-4L

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.03 Ω

Maximum Gate Threshold Voltage

4.4V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more