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Vishay N-Channel MOSFET, 25 A, 20 V, 8-Pin PowerPAK 1212-8 SI7232DN-T1-GE3

Vishay N-Channel MOSFET, 25 A, 20 V, 8-Pin PowerPAK 1212-8 SI7232DN-T1-GE3

RS Stock No. 256-7384

Brand Vishay

  • Category: MOSFETs
  • Maximum Operating Temperature: 175°C
  • Section: Semiconductors

AED 5.898.38

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Vishay N-Channel MOSFET, 25 A, 20 V, 8-Pin PowerPAK 1212-8 SI7232DN-T1-GE3

Vishay N-Channel MOSFET, 25 A, 20 V, 8-Pin PowerPAK 1212-8 SI7232DN-T1-GE3

RS Stock No. 256-7385

Brand Vishay

  • Category Link: https://ae.rsdelivers.com/browse/electronic-components-power-connectors/semiconductors/discrete-semiconductors/mosfets
  • Maximum Continuous Drain Current Id: 25A
  • Maximum Drain Source Voltage Vds: 20V

AED 35.95

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Vishay N-Channel MOSFET, 8 A, 60 V PowerPAK 1212-8 SQS460EN-T1_GE3

Vishay N-Channel MOSFET, 8 A, 60 V PowerPAK 1212-8 SQS460EN-T1_GE3

RS Stock No. 256-7448

Brand Vishay

  • Maximum Drain Source Resistance Rds: 0.0149Ω
  • Maximum Operating Temperature: 175°C
  • Mount Type: Surface

AED 9.100.35

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Vishay N-Channel MOSFET, 8 A, 60 V PowerPAK 1212-8 SQS460EN-T1_GE3

Vishay N-Channel MOSFET, 8 A, 60 V PowerPAK 1212-8 SQS460EN-T1_GE3

RS Stock No. 256-7449

Brand Vishay

  • Maximum Drain Source Resistance Rds: 0.0149Ω
  • Mount Type: Surface
  • Super Section: Discrete Semiconductors

AED 41.29

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Vishay SIS N-Channel MOSFET, 8.8 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 SIS112LDN-T1-GE3

Vishay SIS N-Channel MOSFET, 8.8 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 SIS112LDN-T1-GE3

RS Stock No. 268-8339

Brand Vishay

  • Maximum Operating Temperature: 150°C
  • Maximum Power Dissipation Pd: 19.8W
  • Mount Type: Surface

AED 4.213.12

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Vishay N-Channel MOSFET, 33.8 A, 150 V Enhancement, 8-Pin PowerPAK 1212-8S SISS5708DN-T1-GE3

Vishay N-Channel MOSFET, 33.8 A, 150 V Enhancement, 8-Pin PowerPAK 1212-8S SISS5708DN-T1-GE3

RS Stock No. 268-8346

Brand Vishay

  • Category: MOSFETs
  • Maximum Continuous Drain Current Id: 33.8A
  • Mount Type: Surface

AED 11.628.22

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Vishay N-Channel MOSFET, 33.8 A, 150 V Enhancement, 8-Pin PowerPAK 1212-8S SISS5708DN-T1-GE3

Vishay N-Channel MOSFET, 33.8 A, 150 V Enhancement, 8-Pin PowerPAK 1212-8S SISS5708DN-T1-GE3

RS Stock No. 268-8347

Brand Vishay

  • Channel Type: Type N
  • Product Type: MOSFET
  • Section: Semiconductors

AED 57.86

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Vishay TrenchFET Type P-Channel MOSFET, 3.8 A, 200 V, 8-Pin PowerPAK 1212-8 SI7119DN-T1-GE3

Vishay TrenchFET Type P-Channel MOSFET, 3.8 A, 200 V, 8-Pin PowerPAK 1212-8 SI7119DN-T1-GE3

RS Stock No. 180-7820

Brand Vishay

  • Maximum Continuous Drain Current Id: 3.8A
  • Package Type: PowerPAK 1212-8
  • Typical Gate Charge Qg @ Vgs: 10.6nC

AED 16.85

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Vishay TrenchFET N-Channel MOSFET, 24.7 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 SiS890ADN-T1-GE3

Vishay TrenchFET N-Channel MOSFET, 24.7 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 SiS890ADN-T1-GE3

RS Stock No. 228-2926

Brand Vishay

  • Category: MOSFETs
  • Channel Type: Type N
  • Mount Type: Surface

AED 5.561.32

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Vishay TrenchFET N-Channel MOSFET, 24.7 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 SiS890ADN-T1-GE3

Vishay TrenchFET N-Channel MOSFET, 24.7 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 SiS890ADN-T1-GE3

RS Stock No. 228-2927

Brand Vishay

  • Maximum Drain Source Resistance Rds: 0.0255Ω
  • Section: Semiconductors
  • Series: TrenchFET

AED 17.98

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Vishay SIS9634LDN 4 Dual N-Channel MOSFET, 6 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8 SIS9634LDN-T1-GE3

Vishay SIS9634LDN 4 Dual N-Channel MOSFET, 6 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8 SIS9634LDN-T1-GE3

RS Stock No. 268-8345

Brand Vishay

  • Category: MOSFETs
  • Channel Mode: Enhancement
  • Number of Elements per Chip: 4

AED 27.81

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Vishay N-Channel MOSFET, 2.2 A, 150 V PowerPAK 1212-8 SI7818DN-T1-E3

Vishay N-Channel MOSFET, 2.2 A, 150 V PowerPAK 1212-8 SI7818DN-T1-E3

RS Stock No. 256-7393

Brand Vishay

  • Minimum Operating Temperature: -55°C
  • Mount Type: Surface
  • Section: Semiconductors

AED 42.69

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Vishay SISS N-Channel MOSFET, 26.2 A, 150 V Enhancement, 8-Pin PowerPAK 1212-8S SISS5710DN-T1-GE3

Vishay SISS N-Channel MOSFET, 26.2 A, 150 V Enhancement, 8-Pin PowerPAK 1212-8S SISS5710DN-T1-GE3

RS Stock No. 268-8348

Brand Vishay

  • Length: 3.3mm
  • Maximum Gate Source Voltage Vgs: 20V
  • Mount Type: Surface

AED 11.122.65

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Vishay SISS N-Channel MOSFET, 26.2 A, 150 V Enhancement, 8-Pin PowerPAK 1212-8S SISS5710DN-T1-GE3

Vishay SISS N-Channel MOSFET, 26.2 A, 150 V Enhancement, 8-Pin PowerPAK 1212-8S SISS5710DN-T1-GE3

RS Stock No. 268-8349

Brand Vishay

  • Length: 3.3mm
  • Package Type: PowerPAK 1212-8S
  • Section: Semiconductors

AED 55.89

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Vishay SIS N-Channel MOSFET, 8.8 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 SIS112LDN-T1-GE3

Vishay SIS N-Channel MOSFET, 8.8 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 SIS112LDN-T1-GE3

RS Stock No. 268-8340

Brand Vishay

  • Maximum Drain Source Resistance Rds: 0.119Ω
  • Minimum Operating Temperature: -55°C
  • Package Type: PowerPAK 1212-8

AED 80.05

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Vishay TrenchFET Type P-Channel MOSFET, 3.8 A, 200 V, 8-Pin PowerPAK 1212-8 SI7119DN-T1-GE3

Vishay TrenchFET Type P-Channel MOSFET, 3.8 A, 200 V, 8-Pin PowerPAK 1212-8 SI7119DN-T1-GE3

RS Stock No. 180-7307

Brand Vishay

  • Maximum Continuous Drain Current Id: 3.8A
  • Maximum Power Dissipation Pd: 52W
  • Product Type: MOSFET

AED 5.055.75

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Vishay SIS N-Channel MOSFET, 58.1 A, 80 V, 8-Pin PowerPAK 1212-8S SiSS588DN-T1-GE3

Vishay SIS N-Channel MOSFET, 58.1 A, 80 V, 8-Pin PowerPAK 1212-8S SiSS588DN-T1-GE3

RS Stock No. 239-5404

Brand Vishay

  • Maximum Drain Source Resistance Rds: 0.008Ω
  • Maximum Operating Temperature: 150°C
  • Super Section: Discrete Semiconductors

AED 10.280.02

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Vishay SIS N-Channel MOSFET, 58.1 A, 80 V, 8-Pin PowerPAK 1212-8S SiSS588DN-T1-GE3

Vishay SIS N-Channel MOSFET, 58.1 A, 80 V, 8-Pin PowerPAK 1212-8S SiSS588DN-T1-GE3

RS Stock No. 239-5405

Brand Vishay

  • Length: 3.3mm
  • Maximum Drain Source Resistance Rds: 0.008Ω
  • Minimum Operating Temperature: -55°C

AED 53.09

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Vishay SIS9634LDN 4 Dual N-Channel MOSFET, 6 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8 SIS9634LDN-T1-GE3

Vishay SIS9634LDN 4 Dual N-Channel MOSFET, 6 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8 SIS9634LDN-T1-GE3

RS Stock No. 268-8344

Brand Vishay

  • Category: MOSFETs
  • Maximum Drain Source Voltage Vds: 60V
  • Pin Count: 8

AED 5.224.27

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Vishay N-Channel MOSFET, 2.2 A, 150 V PowerPAK 1212-8 SI7818DN-T1-E3

Vishay N-Channel MOSFET, 2.2 A, 150 V PowerPAK 1212-8 SI7818DN-T1-E3

RS Stock No. 256-7392

Brand Vishay

  • Maximum Drain Source Resistance Rds: 0.024Ω
  • Maximum Operating Temperature: 175°C
  • Section: Semiconductors

AED 12.807.90

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Vishay TrenchFET N-Channel MOSFET, 59 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8S SISS516DN-T1-UE3

Vishay TrenchFET N-Channel MOSFET, 59 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8S SISS516DN-T1-UE3

RS Stock No. 073-5241

Brand Vishay

  • Length: 3.3mm
  • Maximum Drain Source Voltage Vds: 100V
  • Pin Count: 8

AED 13.93

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Vishay TrenchFET N-Channel MOSFET, 70.6 A, 80 V Enhancement, 8-Pin PowerPAK 1212-8S SISS586DN-T1-UE3

Vishay TrenchFET N-Channel MOSFET, 70.6 A, 80 V Enhancement, 8-Pin PowerPAK 1212-8S SISS586DN-T1-UE3

RS Stock No. 073-5242

Brand Vishay

  • Category: MOSFETs
  • Category Link: https://ae.rsdelivers.com/browse/electronic-components-power-connectors/semiconductors/discrete-semiconductors/mosfets
  • Channel Type: N channel

AED 12.81

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Vishay TrenchFET N-Channel MOSFET, 67.4 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8SH SiSH536DN-T1-GE3

Vishay TrenchFET N-Channel MOSFET, 67.4 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8SH SiSH536DN-T1-GE3

RS Stock No. 228-2928

Brand Vishay

  • Category: MOSFETs
  • Maximum Drain Source Voltage Vds: 30V
  • Section: Semiconductors

AED 3.033.45

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Vishay TrenchFET N-Channel MOSFET, 67.4 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8SH SiSH536DN-T1-GE3

Vishay TrenchFET N-Channel MOSFET, 67.4 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8SH SiSH536DN-T1-GE3

RS Stock No. 228-2929

Brand Vishay

  • Maximum Gate Source Voltage Vgs: 16V
  • Super Section: Discrete Semiconductors
  • Typical Gate Charge Qg @ Vgs: 16.6nC

AED 64.60

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