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Vishay 138 1kΩ Rotary Potentiometer 1-Gang Bushing Mount, 138-0-0-102

Vishay 138 1kΩ Rotary Potentiometer 1-Gang Bushing Mount, 138-0-0-102

RS Stock No. 850-9552

Brand Vishay

  • Shaft Diameter: 6.35 mm
  • Shaft Length: 22.2mm
  • Tolerance: ±10%

AED 556.81

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Vishay 138 10kΩ Rotary Potentiometer 1-Gang Bushing Mount, 138-0-0-103

Vishay 138 10kΩ Rotary Potentiometer 1-Gang Bushing Mount, 138-0-0-103

RS Stock No. 850-9561

Brand Vishay

  • Category: Potentiometers
  • Maximum Resistance: 10kΩ
  • Power Rating: 2W

AED 482.04

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Vishay SQJ138EP Type N-Channel MOSFET, 330 A, 40 V Enhancement, 4-Pin SO-8 SQJ138EP-T1_GE3

Vishay SQJ138EP Type N-Channel MOSFET, 330 A, 40 V Enhancement, 4-Pin SO-8 SQJ138EP-T1_GE3

RS Stock No. 210-5029

Brand Vishay

  • Channel Type: Type N
  • Height: 1.12mm
  • Super Section: Discrete Semiconductors

AED 64.60

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Vishay SQJ138EP Type N-Channel MOSFET, 330 A, 40 V Enhancement, 4-Pin SO-8

Vishay SQJ138EP Type N-Channel MOSFET, 330 A, 40 V Enhancement, 4-Pin SO-8

RS Stock No. 210-5027

Brand Vishay

  • Maximum Power Dissipation Pd: 312W
  • Minimum Operating Temperature: -55°C
  • Mount Type: Surface

AED 8.257.72

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Vishay 1000μF Aluminium Electrolytic Capacitor 25V dc, Axial, Through Hole - MAL213816102E3

Vishay 1000μF Aluminium Electrolytic Capacitor 25V dc, Axial, Through Hole - MAL213816102E3

RS Stock No. 850-5926

Brand Vishay

  • Category: Aluminium Capacitors
  • Equivalent Series Resistance: 250mΩ
  • Voltage: 25V dc

AED 18.59

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Vishay 1000μF Aluminium Electrolytic Capacitor 40V dc, Axial, Through Hole - MAL213817102E3

Vishay 1000μF Aluminium Electrolytic Capacitor 40V dc, Axial, Through Hole - MAL213817102E3

RS Stock No. 850-5935

Brand Vishay

  • Category: Aluminium Capacitors
  • Diameter: 15mm
  • Leakage Current: 84 μA

AED 23.26

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Vishay N-Channel 40 V Type N-Channel MOSFET, 315 A, 40 V, 4-Pin PowerPAK (8x8L) SQJ138ELP-T1_GE3

Vishay N-Channel 40 V Type N-Channel MOSFET, 315 A, 40 V, 4-Pin PowerPAK (8x8L) SQJ138ELP-T1_GE3

RS Stock No. 225-9948

Brand Vishay

  • Channel Type: Type N
  • Maximum Drain Source Resistance Rds: 2.1Ω
  • Super Section: Discrete Semiconductors

AED 60.67

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