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Vishay TrenchFET Type P-Channel TrenchFET Power MOSFET, 1.7 A, 60 V Enhancement, 3-Pin SOT-23

Vishay TrenchFET Type P-Channel TrenchFET Power MOSFET, 1.7 A, 60 V Enhancement, 3-Pin SOT-23

RS Stock No. 180-7397

Brand Vishay

  • Channel Mode: Enhancement
  • Maximum Continuous Drain Current: 1.7 A
  • Package Type: TO-236

AED 3.033.45

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Vishay TrenchFET Type P-Channel TrenchFET Power MOSFET, 1.7 A, 60 V Enhancement, 3-Pin SOT-23 SQ2309ES-T1_GE3

Vishay TrenchFET Type P-Channel TrenchFET Power MOSFET, 1.7 A, 60 V Enhancement, 3-Pin SOT-23 SQ2309ES-T1_GE3

RS Stock No. 180-7990

Brand Vishay

  • Maximum Power Dissipation Pd: 2W
  • Section: Semiconductors
  • Super Section: Discrete Semiconductors

AED 51.68

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Vishay TrenchFET Type N-Channel MOSFET, 350.8 A, 30 V Enhancement, 8-Pin SO-8

Vishay TrenchFET Type N-Channel MOSFET, 350.8 A, 30 V Enhancement, 8-Pin SO-8

RS Stock No. 228-2900

Brand Vishay

  • Maximum Continuous Drain Current Id: 350.8A
  • Maximum Operating Temperature: 150°C
  • Pin Count: 8

AED 11.122.65

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Vishay TrenchFET Type N-Channel MOSFET, 126 A, 100 V Enhancement, 8-Pin SO-8

Vishay TrenchFET Type N-Channel MOSFET, 126 A, 100 V Enhancement, 8-Pin SO-8

RS Stock No. 228-2903

Brand Vishay

  • Maximum Drain Source Voltage Vds: 100V
  • Maximum Power Dissipation Pd: 104W
  • Mount Type: Surface

AED 15.841.35

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Vishay TrenchFET Type N-Channel MOSFET, 146 A, 80 V Enhancement, 8-Pin SO-8

Vishay TrenchFET Type N-Channel MOSFET, 146 A, 80 V Enhancement, 8-Pin SO-8

RS Stock No. 228-2907

Brand Vishay

  • Maximum Drain Source Resistance Rds: 2.7mΩ
  • Section: Semiconductors
  • Typical Gate Charge Qg @ Vgs: 50.6nC

AED 13.313.48

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Vishay TrenchFET Type N-Channel MOSFET, 20 A, 100 V Enhancement, 8-Pin PowerPAK 1212

Vishay TrenchFET Type N-Channel MOSFET, 20 A, 100 V Enhancement, 8-Pin PowerPAK 1212

RS Stock No. 228-2930

Brand Vishay

  • Channel Mode: Enhancement
  • Channel Type: Type N
  • Minimum Operating Temperature: -55°C

AED 4.887.23

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Vishay TrenchFET Type N-Channel MOSFET, 185.6 A, 30 V Enhancement, 8-Pin PowerPAK 1212

Vishay TrenchFET Type N-Channel MOSFET, 185.6 A, 30 V Enhancement, 8-Pin PowerPAK 1212

RS Stock No. 228-2932

Brand Vishay

  • Maximum Drain Source Resistance Rds: 1.06mΩ
  • Minimum Operating Temperature: -55°C
  • Super Section: Discrete Semiconductors

AED 11.122.65

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Vishay TrenchFET Type N-Channel MOSFET, 113 A, 45 V Enhancement, 4-Pin SO-8 SiJ450DP-T1-GE3

Vishay TrenchFET Type N-Channel MOSFET, 113 A, 45 V Enhancement, 4-Pin SO-8 SiJ450DP-T1-GE3

RS Stock No. 228-2887

Brand Vishay

  • Channel Type: N
  • Pin Count: 4
  • Super Section: Discrete Semiconductors

AED 30.90

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Vishay TrenchFET Type N-Channel MOSFET, 113 A, 45 V Enhancement, 8-Pin SO-8 SiR450DP-T1-RE3

Vishay TrenchFET Type N-Channel MOSFET, 113 A, 45 V Enhancement, 8-Pin SO-8 SiR450DP-T1-RE3

RS Stock No. 228-2899

Brand Vishay

  • Category Link: https://ae.rsdelivers.com/browse/electronic-components-power-connectors/semiconductors/discrete-semiconductors/mosfets
  • Mounting Type: Surface Mount
  • Section: Semiconductors

AED 42.13

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Vishay TrenchFET Type N-Channel MOSFET, 77.4 A, 150 V Enhancement, 8-Pin SO-8 SiR570DP-T1-RE3

Vishay TrenchFET Type N-Channel MOSFET, 77.4 A, 150 V Enhancement, 8-Pin SO-8 SiR570DP-T1-RE3

RS Stock No. 228-2906

Brand Vishay

  • Maximum Continuous Drain Current Id: 77.4A
  • Minimum Operating Temperature: -55°C
  • Section: Semiconductors

AED 71.90

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Vishay TrenchFET Type N-Channel MOSFET, 146 A, 80 V Enhancement, 8-Pin SO-8 SiR580DP-T1-RE3

Vishay TrenchFET Type N-Channel MOSFET, 146 A, 80 V Enhancement, 8-Pin SO-8 SiR580DP-T1-RE3

RS Stock No. 228-2908

Brand Vishay

  • Maximum Power Dissipation Pd: 104W
  • Mount Type: Surface
  • Typical Gate Charge Qg @ Vgs: 50.6nC

AED 52.80

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Vishay TrenchFET Type P-Channel MOSFET, 71.9 A, 80 V Enhancement, 8-Pin SO-8 SiR681DP-T1-RE3

Vishay TrenchFET Type P-Channel MOSFET, 71.9 A, 80 V Enhancement, 8-Pin SO-8 SiR681DP-T1-RE3

RS Stock No. 228-2910

Brand Vishay

  • Maximum Continuous Drain Current Id: 71.9A
  • Maximum Drain Source Voltage Vds: 80V
  • Typical Gate Charge Qg @ Vgs: 69.4nC

AED 76.68

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Vishay TrenchFET Type N-Channel MOSFET, 51.4 A, 100 V Enhancement, 8-Pin SO-8 SiR876BDP-T1-RE3

Vishay TrenchFET Type N-Channel MOSFET, 51.4 A, 100 V Enhancement, 8-Pin SO-8 SiR876BDP-T1-RE3

RS Stock No. 228-2912

Brand Vishay

  • Channel Mode: Enhancement
  • Channel Type: Type N
  • Mount Type: Surface

AED 53.37

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Vishay TrenchFET Type N-Channel MOSFET, 20 A, 100 V Enhancement, 8-Pin PowerPAK 1212 SiSH892BDN-T1-GE3

Vishay TrenchFET Type N-Channel MOSFET, 20 A, 100 V Enhancement, 8-Pin PowerPAK 1212 SiSH892BDN-T1-GE3

RS Stock No. 228-2931

Brand Vishay

  • Category Link: https://ae.rsdelivers.com/browse/electronic-components-power-connectors/semiconductors/discrete-semiconductors/mosfets
  • Maximum Operating Temperature: 150°C
  • Mount Type: Surface

AED 36.51

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Vishay TrenchFET Type P-Channel MOSFET, 8 A, 20 V Enhancement, 6-Pin TSOP

Vishay TrenchFET Type P-Channel MOSFET, 8 A, 20 V Enhancement, 6-Pin TSOP

RS Stock No. 134-9155

Brand Vishay

  • Maximum Gate Source Voltage: -8 V, +8 V
  • Minimum Operating Temperature: -55 °C
  • Series: TrenchFET

AED 1.853.78

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Vishay TrenchFET Type N-Channel MOSFET, 19 A, 40 V Enhancement, 8-Pin SOIC

Vishay TrenchFET Type N-Channel MOSFET, 19 A, 40 V Enhancement, 8-Pin SOIC

RS Stock No. 165-2752

Brand Vishay

  • Category: MOSFETs
  • Category Link: https://ae.rsdelivers.com/browse/electronic-components-power-connectors/semiconductors/discrete-semiconductors/mosfets
  • Maximum Power Dissipation Pd: 6W

AED 6.881.44

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Vishay TrenchFET Type P-Channel MOSFET, 8 A, 12 V Enhancement, 6-Pin TSOP

Vishay TrenchFET Type P-Channel MOSFET, 8 A, 12 V Enhancement, 6-Pin TSOP

RS Stock No. 165-6917

Brand Vishay

  • Category Link: https://ae.rsdelivers.com/browse/electronic-components-power-connectors/semiconductors/discrete-semiconductors/mosfets
  • Minimum Operating Temperature: -55°C
  • Pin Count: 6

AED 5.898.38

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Vishay TrenchFET Type N-Channel MOSFET, 36 A, 40 V Enhancement, 8-Pin SOIC

Vishay TrenchFET Type N-Channel MOSFET, 36 A, 40 V Enhancement, 8-Pin SOIC

RS Stock No. 180-7284

Brand Vishay

  • Mounting Type: Surface Mount
  • Package Type: SOIC
  • Series: TrenchFET

AED 9.690.19

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Vishay TrenchFET Type P-Channel MOSFET, 12.5 A, 20 V Enhancement, 8-Pin TSSOP

Vishay TrenchFET Type P-Channel MOSFET, 12.5 A, 20 V Enhancement, 8-Pin TSSOP

RS Stock No. 228-2822

Brand Vishay

  • Channel Type: Type P
  • Maximum Operating Temperature: 150°C
  • Maximum Power Dissipation Pd: 2.2W

AED 6.235.42

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Vishay TrenchFET Type N-Channel MOSFET, 200 A, 40 V Enhancement, 7-Pin TO-263

Vishay TrenchFET Type N-Channel MOSFET, 200 A, 40 V Enhancement, 7-Pin TO-263

RS Stock No. 228-2980

Brand Vishay

  • Forward Voltage Vf: 0.72V
  • Section: Semiconductors
  • Super Section: Discrete Semiconductors

AED 7.729.68

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Vishay TrenchFET Type N-Channel MOSFET, 150 A, 100 V Enhancement, 7-Pin TO-263

Vishay TrenchFET Type N-Channel MOSFET, 150 A, 100 V Enhancement, 7-Pin TO-263

RS Stock No. 228-2984

Brand Vishay

  • Channel Type: N
  • Maximum Continuous Drain Current: 150 A
  • Maximum Drain Source Resistance: 0.0035 Ω

AED 7.504.98

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Vishay TrenchFET Type P-Channel MOSFET, 50 A, 20 V Enhancement, 8-Pin SO-8

Vishay TrenchFET Type P-Channel MOSFET, 50 A, 20 V Enhancement, 8-Pin SO-8

RS Stock No. 165-6938

Brand Vishay

  • Length: 6.25mm
  • Maximum Gate Source Voltage Vgs: 12 V
  • Maximum Power Dissipation Pd: 39W

AED 7.415.10

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Vishay TrenchFET Type P-Channel MOSFET, 12 A, 12 V Enhancement, 6-Pin SC-70

Vishay TrenchFET Type P-Channel MOSFET, 12 A, 12 V Enhancement, 6-Pin SC-70

RS Stock No. 165-6977

Brand Vishay

  • Category: MOSFETs
  • Maximum Continuous Drain Current Id: 12A
  • Width: 1.7 mm

AED 2.527.88

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Vishay TrenchFET Type P-Channel MOSFET, 36 A, 30 V Enhancement, 8-Pin SO-8

Vishay TrenchFET Type P-Channel MOSFET, 36 A, 30 V Enhancement, 8-Pin SO-8

RS Stock No. 180-7292

Brand Vishay

  • Maximum Continuous Drain Current: 36 A
  • Maximum Drain Source Voltage: 30 V
  • Pin Count: 8

AED 13.201.12

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