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Infineon SiC N-Channel MOSFET, 36 A, 650 V, 8-Pin PG-HSOF-8 IMT65R072M1HXUMA1

RS Stock No.: 284-729Brand: InfineonManufacturers Part No.: IMT65R072M1HXUMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

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Stock information temporarily unavailable.

AED 44.60

AED 44.60 Each (ex VAT)

AED 46.83

AED 46.83 Each (inc. VAT)

Infineon SiC N-Channel MOSFET, 36 A, 650 V, 8-Pin PG-HSOF-8 IMT65R072M1HXUMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1AED 44.60
2AED 89.20
3AED 133.80
4AED 178.40
5AED 223.00
6AED 267.59
7AED 312.19
8AED 356.79
9AED 401.39
10AED 409.42
11AED 450.37
12AED 491.31
13AED 532.25
14AED 573.20
15AED 614.14

AED 44.60

AED 44.60 Each (ex VAT)

AED 46.83

AED 46.83 Each (inc. VAT)

Infineon SiC N-Channel MOSFET, 36 A, 650 V, 8-Pin PG-HSOF-8 IMT65R072M1HXUMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1AED 44.60
2AED 89.20
3AED 133.80
4AED 178.40
5AED 223.00
6AED 267.59
7AED 312.19
8AED 356.79
9AED 401.39
10AED 409.42
11AED 450.37
12AED 491.31
13AED 532.25
14AED 573.20
15AED 614.14

Stock information temporarily unavailable.

Please check again later.

quantityUnit price
1 - 9AED 44.60
10 - 99AED 40.94
100 - 499AED 38.57
500 - 999AED 36.46
1000+AED 33.48

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more