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Infineon CoolSiC 2000 V SiC Trench MOSFET SiC N-Channel MOSFET, 89 A, 2000 V, 4-Pin PG-TO247-4-PLUS-NT14

RS Stock No.: 284-862Brand: InfineonManufacturers Part No.: IMYH200R024M1HXKSA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

89 A

Maximum Drain Source Voltage

2000 V

Package Type

PG-TO247-4-PLUS-NT14

Series

CoolSiC 2000 V SiC Trench MOSFET

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

Country of Origin

Malaysia

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Stock information temporarily unavailable.

AED 10,850.18

AED 361.672 Each (In a Tube of 30) (ex VAT)

AED 11,392.69

AED 379.756 Each (In a Tube of 30) (inc. VAT)

Infineon CoolSiC 2000 V SiC Trench MOSFET SiC N-Channel MOSFET, 89 A, 2000 V, 4-Pin PG-TO247-4-PLUS-NT14

30

Available in multiples of 30
30AED 10,850.18
60AED 21,700.35
90AED 32,550.52
120AED 43,400.70
150AED 54,250.88
180AED 65,101.05
210AED 75,951.22
240AED 86,801.40
270AED 97,651.58
300AED 108,501.75
330AED 119,351.92
360AED 130,202.10
390AED 141,052.28
420AED 151,902.45
450AED 162,752.62

AED 10,850.18

AED 361.672 Each (In a Tube of 30) (ex VAT)

AED 11,392.69

AED 379.756 Each (In a Tube of 30) (inc. VAT)

Infineon CoolSiC 2000 V SiC Trench MOSFET SiC N-Channel MOSFET, 89 A, 2000 V, 4-Pin PG-TO247-4-PLUS-NT14
Stock information temporarily unavailable.

30

Available in multiples of 30
30AED 10,850.18
60AED 21,700.35
90AED 32,550.52
120AED 43,400.70
150AED 54,250.88
180AED 65,101.05
210AED 75,951.22
240AED 86,801.40
270AED 97,651.58
300AED 108,501.75
330AED 119,351.92
360AED 130,202.10
390AED 141,052.28
420AED 151,902.45
450AED 162,752.62

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

89 A

Maximum Drain Source Voltage

2000 V

Package Type

PG-TO247-4-PLUS-NT14

Series

CoolSiC 2000 V SiC Trench MOSFET

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

Country of Origin

Malaysia

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more