Infineon CoolMOS™ C6 N-Channel MOSFET, 38 A, 650 V, 3-Pin TO-220 IPP60R099C6XKSA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ C6
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
99 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.65mm
Typical Gate Charge @ Vgs
119 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.9mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.9V
Height
16.15mm
Product details
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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AED 55.65
AED 27.825 Each (In a Pack of 2) (ex VAT)
AED 58.43
AED 29.216 Each (In a Pack of 2) (inc. VAT)
Standard
2
AED 55.65
AED 27.825 Each (In a Pack of 2) (ex VAT)
AED 58.43
AED 29.216 Each (In a Pack of 2) (inc. VAT)
Standard
2
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 8 | AED 27.825 | AED 55.65 |
| 10 - 18 | AED 24.78 | AED 49.56 |
| 20 - 48 | AED 23.10 | AED 46.20 |
| 50 - 98 | AED 21.735 | AED 43.47 |
| 100+ | AED 20.055 | AED 40.11 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
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- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ C6
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
99 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.65mm
Typical Gate Charge @ Vgs
119 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.9mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.9V
Height
16.15mm
Product details
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products