Infineon HEXFET N-Channel MOSFET, 180 A, 40 V, 3-Pin TO-220AB IRF1404ZPBF
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
40 V
Package Type
TO-220AB
Series
HEXFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.54mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
100 nC @ 10 V
Width
4.69mm
Transistor Material
Si
Number of Elements per Chip
1
Height
8.77mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Product details
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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AED 11.13
AED 5.565 Each (In a Pack of 2) (ex VAT)
AED 11.69
AED 5.843 Each (In a Pack of 2) (inc. VAT)
Standard
2
AED 11.13
AED 5.565 Each (In a Pack of 2) (ex VAT)
AED 11.69
AED 5.843 Each (In a Pack of 2) (inc. VAT)
Standard
2
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 18 | AED 5.565 | AED 11.13 |
| 20 - 48 | AED 4.358 | AED 8.72 |
| 50 - 98 | AED 4.148 | AED 8.30 |
| 100 - 198 | AED 3.938 | AED 7.88 |
| 200+ | AED 3.675 | AED 7.35 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
40 V
Package Type
TO-220AB
Series
HEXFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.54mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
100 nC @ 10 V
Width
4.69mm
Transistor Material
Si
Number of Elements per Chip
1
Height
8.77mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Product details
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products