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IXYS HiperFET, Polar N-Channel MOSFET, 96 A, 150 V, 3-Pin TO-247 IXFH96N15P

RS Stock No.: 194-322Brand: IXYSManufacturers Part No.: IXFH96N15P
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Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

96 A

Maximum Drain Source Voltage

150 V

Series

HiperFET, Polar

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

480 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

110 nC @ 10 V

Width

5.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

16.26mm

Maximum Operating Temperature

+175 °C

Height

21.46mm

Minimum Operating Temperature

-55 °C

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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Stock information temporarily unavailable.

AED 28.35

AED 28.35 Each (ex VAT)

AED 29.77

AED 29.77 Each (inc. VAT)

IXYS HiperFET, Polar N-Channel MOSFET, 96 A, 150 V, 3-Pin TO-247 IXFH96N15P
Select packaging type

AED 28.35

AED 28.35 Each (ex VAT)

AED 29.77

AED 29.77 Each (inc. VAT)

IXYS HiperFET, Polar N-Channel MOSFET, 96 A, 150 V, 3-Pin TO-247 IXFH96N15P
Stock information temporarily unavailable.
Select packaging type

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quantityUnit price
1 - 4AED 28.35
5 - 19AED 26.51
20 - 49AED 24.88
50 - 99AED 21.10
100+AED 20.32

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

96 A

Maximum Drain Source Voltage

150 V

Series

HiperFET, Polar

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

480 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

110 nC @ 10 V

Width

5.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

16.26mm

Maximum Operating Temperature

+175 °C

Height

21.46mm

Minimum Operating Temperature

-55 °C

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more