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Nexperia P-Channel MOSFET, 3.9 A, 20 V, 3-Pin SOT-23 PMV65XP,215

RS Stock No.: 134-295Brand: NexperiaManufacturers Part No.: PMV65XP,215
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Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

3.9 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

76 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Minimum Gate Threshold Voltage

0.47V

Maximum Power Dissipation

1.92 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

7.6 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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Stock information temporarily unavailable.

AED 72.10

AED 1.442 Each (In a Pack of 50) (ex VAT)

AED 75.70

AED 1.514 Each (In a Pack of 50) (inc. VAT)

Nexperia P-Channel MOSFET, 3.9 A, 20 V, 3-Pin SOT-23 PMV65XP,215
Select packaging type

AED 72.10

AED 1.442 Each (In a Pack of 50) (ex VAT)

AED 75.70

AED 1.514 Each (In a Pack of 50) (inc. VAT)

Nexperia P-Channel MOSFET, 3.9 A, 20 V, 3-Pin SOT-23 PMV65XP,215
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
50 - 550AED 1.442AED 72.10
600 - 1450AED 0.772AED 38.62
1500+AED 0.67AED 33.48

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

3.9 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

76 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Minimum Gate Threshold Voltage

0.47V

Maximum Power Dissipation

1.92 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

7.6 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more