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onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-220 NTPF082N65S3F

RS Stock No.: 178-4602Brand: onsemiManufacturers Part No.: NTPF082N65S3F
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Width

4.9mm

Length

10.63mm

Typical Gate Charge @ Vgs

70 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Height

16.12mm

Country of Origin

China

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onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-220 NTPF082N65S3F
AED 24.226Each (In a Tube of 50) (ex VAT)
Stock information temporarily unavailable.

AED 29.77

AED 29.77 Each (ex VAT)

AED 31.26

AED 31.26 Each (inc. VAT)

onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-220 NTPF082N65S3F

AED 29.77

AED 29.77 Each (ex VAT)

AED 31.26

AED 31.26 Each (inc. VAT)

onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-220 NTPF082N65S3F
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

quantityUnit price
1 - 9AED 29.77
10+AED 25.65

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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You may be interested in
onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-220 NTPF082N65S3F
AED 24.226Each (In a Tube of 50) (ex VAT)

Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Width

4.9mm

Length

10.63mm

Typical Gate Charge @ Vgs

70 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Height

16.12mm

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-220 NTPF082N65S3F
AED 24.226Each (In a Tube of 50) (ex VAT)