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STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 8 A, 900 V, 3-Pin TO-247 STW9NK90Z

RS Stock No.: 485-8623Brand: STMicroelectronicsManufacturers Part No.: STW9NK90Z
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

900 V

Series

MDmesh, SuperMESH

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

72 nC @ 10 V

Width

5.15mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.75mm

Maximum Operating Temperature

+150 °C

Height

20.15mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

AED 14.54

AED 14.54 Each (ex VAT)

AED 15.27

AED 15.27 Each (inc. VAT)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 8 A, 900 V, 3-Pin TO-247 STW9NK90Z
Select packaging type

AED 14.54

AED 14.54 Each (ex VAT)

AED 15.27

AED 15.27 Each (inc. VAT)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 8 A, 900 V, 3-Pin TO-247 STW9NK90Z
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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quantityUnit price
1 - 9AED 14.54
10 - 24AED 13.07
25 - 99AED 12.39
100 - 499AED 9.92
500+AED 8.77

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

900 V

Series

MDmesh, SuperMESH

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

72 nC @ 10 V

Width

5.15mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.75mm

Maximum Operating Temperature

+150 °C

Height

20.15mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in